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Abstract: The effectiveness of silicon carbide (SiC) nanowires (NW) as electrode material for micro-supercapacitors has been investigated. SiC NWs are grown on a SiC thin film coated with a thin Ni catalyst layer via a chemical vapor deposition route at 950 °C. A specific capacitance in the range of ∼240 μF cm−2 is demonstrated, which is comparable to the values recently reported for planar micro-supercapacitor electrodes. Charge–discharge studies demonstrate the SiC nanowires exhibit exceptional stability, with 95% capacitance retention after 2 × 105 charge/discharge cycles in an environmentally benign, aqueous electrolyte. [Copyright &y& Elsevier]

The development of passivated silicon nanowire (SiNW) based micro-supercapacitor electrodes for on-chip applications using an environmentally benign aqueous electrolyte is reported. The SiNWs, produced by low-temperature (50 °C) electrochemical etching, corrode during charge/discharge cycling in the aqueous environment, but upon coating with a silicon carbide passivation layer, the corrosion is mitigated. The as-formed materials are in electrical contact with the substrate, requiring no additional current collector. The passivated NWs achieve capacitance values up to ∼1.7 mF/cm2 projected area (comparable to state-of-the art carbon based micro-supercapacitor electrodes), exhibit robust cycling stability, and maintain capacitive behavior over a wide range of charge/discharge rates. [ABSTRACT FROM AUTHOR]