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Using lateral phase change random access memory (PCRAM) for demonstration, we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure. Due to the good confinement and coupling between the Ge2Sb2Te5 (GST) QD and the tungsten electrodes, the device shows a threshold current and voltage as small as 2.50 &mgr;A and 1.08 V, respectively. Our process is highlighted with good controllability and repeatability with 100% yield, making it a promising fabrication process for nanoelectronics. [ABSTRACT FROM AUTHOR]

We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K. [ABSTRACT FROM AUTHOR]

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus-doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased. [ABSTRACT FROM AUTHOR]