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Nanostructures are the building blocks of future nanodevices and thus methods for fabricating nanostructures of various materials in various forms are fundamentally important. Among those nanostructures ZnO has received much attention over the past few years due to the wide range of research by many different groups focused on different novel nanostructures with different properties. Although ZnO nanowires have been intensively studied, there are only a few methods that showed promising characteristics for practical applications. Without much effort, it can be grown in many different nanostructure forms, thus allowing various novel devices to be achieved. In this study, we intend to review those methods that enable nanostructure growth to be more controllable and feasible for applications. The methods for fabricating ZnO nanostructures are introduced in the first part. In the second part, the application of those nanostructures are mentioned and explained. Finally, the future realization of nanodevices is discussed. [ABSTRACT FROM AUTHOR]

Abstract: In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550°C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70–311nm and 10–15μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET). [Copyright &y& Elsevier]

We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single-crystal and bi-crystal CuO nanowires can be selectively obtained by adjusting the temperature. The devices made of single-crystal nanowires follow Ohm’s law, with a high resistance, within the sweeping voltage range of 0–4 V, whereas those made of bi-crystal nanowires exhibit threshold and memory resistive switching behaviors, which are due to the enrichment of copper ions in the grain boundaries of bi-crystal CuO nanowires providing sources for the formation of conductive filaments. Moreover, the bi-crystal nanowires with higher defect densities in grain boundaries result in lower threshold voltages of switching from high to low resistance states. The threshold resistive switching behavior can be turned into memory resistive switching behavior by increasing the thickness of the device electrodes or reducing the compliance current. The endurance of memory resistive switching through the pre-defined conduction paths in the single grain boundaries of bi-crystal CuO nanowires is at least 1000 cycles without any performance deterioration. This high reliability is ascribed to the single conductive filaments. [ABSTRACT FROM AUTHOR]

Carrier concentration in a piezoelectric semiconductor greatly affects alternating current (AC) piezoelectric nanogenerators (NGs) because of the carrier screening effect on the piezoelectric potential. The output performance of a series of NGs is investigated by tuning the Si dopant concentration in GaN nanowires. The results show a strong carrier screening effect that degrades output performance for high doping concentrations but results in high output power for low doping concentrations. [ABSTRACT FROM AUTHOR]

Abstract: The present study is focused on electrochemical fabrication and characterization of the ordered arrays of one-dimensional Ni nanostructures templated by porous anodic alumina films. A possibility to monitor and control homogeneity of arrays and completeness of the pores filling in the course of potentiostatic deposition is discussed. Current efficiency is determined from independent analytical data and taken into account in the treatment of charge transients. The crystallinity of Ni nanowire arrays as well as the homogeneity and completeness of the replication process are demonstrated to be controlled by deposition potential. Just these structural features affect the magnetic properties of nanowire arrays. The advantages and drawbacks of the quantitative coulometric analysis of current transients are considered. [Copyright &y& Elsevier]

We demonstrate a novel defect-induced bending mechanism for a modified oblique-angle deposition (OAD) system, where different defect density was introduced to accommodate the mass difference between the shadowed and exposed surfaces, leading to continuous structural bending. Oblique angle sputtering and hydrothermal processes were employed for growth of inclined ZnO nanowire arrays on ZnO bent columns. Transmission electron microscopy images reveal that a dislocation network was introduced to accommodate the mass difference in bent columns, and the bending angle could be controlled by growth temperature. Nanowires were then grown along the tangent lines of the bent column tips. The bent column curvature and limited space determine the nanowire growth direction. The reflectance measurements demonstrate that the oblique-aligned ZnO nanowire arrays are an excellent candidate for antireflection coatings, showing the significant suppression of reflectance of 87.5% and 90.0% for polished Si under TE and TM polarization, respectively. The interference oscillations of reflectance show the optical anisotropy of oblique-aligned ZnO nanowire arrays, which is dependent on the angle range of nanowire direction. Dislocation networks were introduced to accommodate strain in bent columns during oblique-angle deposition under highly energetic conditions, which made columns bent to opposite quadrants, with the bending angle controlled by growth temperature. Oblique-aligned nanowires grown on these bent columns exhibit excellent antireflection properties. [ABSTRACT FROM AUTHOR]

A number of catalysts with different characteristics were prepared using various techniques and used as the catalysts for the growth of carbon nanotubes (CNTs). They include dc sputter deposited Ni thin films, rf sputter deposited Ni-containing diamond-like carbon (Ni-DLC), and Co thin films deposited using a molecular beam epitaxy (MBE) technique. The growth of CNT from MBE-Co thin films was favored under a higher pressure, MW power, and/or methane concentration. For the Ni thin films, exhibiting different crystallinity, it appears that an optimal or largest diameter can be obtained under a lower pressure when an amorphous catalyst is used. Various amounts of carbon nanowires (CNWs) were observed, depending on the thickness or the crystallinity of the catalyst. The formation of CNW also depends on the pressure. Finally, the CNT diameter seems to increase with the nanoparticle size in the Ni-DLC. Furthermore, the yield tends to increase with the concentration of Ni nano-particles in the DLC. [Copyright &y& Elsevier]