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In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe BiCMOS technology from STMicroelectronics, Crolles, France. Due to the ability of being integrated on silicon, this noise source can be used for high-frequency in situ noise characterization of advanced silicon CMOS or bipolar technologies in the mmW range. In previous study, the diode was used as a noise source when biased near the avalanche regime, and an excess noise ratio (ENR) up to 20 dB has been achieved in a frequency range up to 260 GHz. In this article, the ENR value of the diode is retrieved from the electrical model and compared to the value extracted by measurements. The extracted ENR value was also studied for several diode sizes and biasing currents and measured up to 325 GHz, with a good agreement with the modeling. [ABSTRACT FROM AUTHOR]

This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and Schottky junction in series, realized on the SiGe BiCMOS 55-nm technology from STMicroelectronics. Biased in the avalanche regime, this integrated diode noise source achieves a tunable excess noise ratio (ENR) ranged between 0 dB and 15 dB, in the 130–260-GHz frequency range. In order to highlight the usefulness of the integrated noise source, the noise figure of two amplifiers was measured: the first one is an integrated low-noise amplifier (LNA) operating in the D-band (130–170 GHz) while the second one is packaged and operates from 220 to 260 GHz. Due to its ability to be naturally integrated on silicon, this noise source features a strong interest to carry out high-frequency in situ noise characterization of advanced Si CMOS or BiCMOS technologies in the mmW range. [ABSTRACT FROM AUTHOR]

A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determination. The approach allows to extract all the information required for understanding the noise performance of the device without any restriction on the statistics of the noise sources. The results show the relevant noise phenomena from a new angle. [ABSTRACT FROM AUTHOR]

SiGe HBT noise parameters (NF\min, Rn and \Gammaopt) are for the first time extracted in the entire 130 – 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on this system were performed for each tuner impedance state, from which are extracted the transistor noise parameters in the complete D-band. [ABSTRACT FROM PUBLISHER]

Field effect transistor (FET) technology constitutes the best low-noise technology so far. Such progress has been possible because the technology has continuously evolved. In order to illustrate this evolution, let us consider the cross-section of three FET devices: [ABSTRACT FROM PUBLISHER]