Search

Abstract The influence of blending ratio on resistive switching effect in donor-acceptor type composite of [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and poly(N -vinylcarbazole) (PVK)-based memory devices are investigated. Current-voltage (I - V) curves for the ITO/PCBM + PVK/Al devices with 9 wt.% of PCBM showed a current bistability with a maximum OFF/ON resistance ratio of 9 × 104, which was 100 times larger than that of the device with 23 wt.% of PCBM and was 2000 times larger than that of the device with 41 wt.% of PCBM. Furthermore, the threshold voltage obviously decreased as the PCBM concentration increases. The retention time was above 105 s indicative of the memory stability of the as-fabricated devices. The I - V characteristics at OFF state dominantly comply with the rules of space-charge-limited-current behaviors, and I - V curve at ON state obey Ohmic laws. The proposed device suggests a promising approach for adjustale OFF/ON resistance ratio and threshold voltage in electronic memory devices. Graphical abstract Image Highlights • The influence of blending ratio on resistive switching effect are investigated. • The threshold voltage obviously decreased as the PCBM concentration increases. • The resistance ratio obviously increased with the PCBM concentration decreases. [ABSTRACT FROM AUTHOR]

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications. [ABSTRACT FROM AUTHOR]