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So-called “tagless” caches have become common as a means to deal with the vast L4 last-level caches (LLCs) enabled by increasing device density, emerging memory technologies, and advanced integration capabilities (e.g., 3-D). Tagless schemes often result in intercache entanglement between tagless cache (L4) and the cache (L3) stewarding its metadata. We explore new cache organization policies that mitigate overheads stemming from the intercache-level replacement entanglement. We incorporate support for explicit tiling shapes that can better match software access patterns to improve the spatial and temporal locality of large block allocations in many essential computational kernels. To address entanglement overheads and pathologies, we propose new replacement policies and energy-friendly mechanisms for tagless LLCs, such as restricted block caching (RBC) and victim tag buffer caching (VBC) to incorporate L4 eviction costs into L3 replacement decisions efficiently. We evaluate our schemes on a range of linear algebra kernels that are software tiled. RBC and VBC demonstrate a reduction in memory traffic of 83/4.4/67% and 69/35.5/76% for 8/32/64 MB L4s, respectively. Besides, RBC and VBC provide speedups of 16/0.3/0.6% and 15.7/1.8/0.8%, respectively, for systems with 8/32/64 MB L4, over a tagless cache with an LRU policy in the L3. We also show that matching the shape of the hardware allocation for each tagless region superblocks to the access order of the software tile improves latency by 13.4% over the baseline tagless cache with reductions in memory traffic of 51% over linear superblocks. [ABSTRACT FROM AUTHOR]

This brief exploits the fusion of low-power logic and nonvolatile memory inside the emerging ferroelectric FETs (FeFETs) and proposes a new nonvolatile D flip-flop (nvDFF) through the device-circuit co-design. Compared with existing FeFET-based nvDFFs with on-demand control of backup and restore (B&R), the area overhead is lowered by half, and the routing cost is reduced with embedded backup control into the supply voltage. Circuit simulations show below 5% energy-delay overhead in the normal mode and femtojoule B&R energy. This new nvDFF promises area- and energy-efficient nonvolatile computing for power-gating and energy-harvesting applications. [ABSTRACT FROM AUTHOR]

Nonvolatile SRAM (nvSRAM) has emerged as a promising approach to reducing the standby energy consumption by storing the state into an in situ nonvolatile memory element and shutting down the power supply. Existing nvSRAM solutions based on a nonvolatile backup in magnetic tunnel junction and ReRAM, however, are costly in backup and restore energy due to static current. This cost results in a long break-even time (BET) when compared with a lowered voltage standby volatile SRAM. This brief proposes an nvSRAM based on ferroelectric FETs (FeFETs) that are capable of fully avoiding such static current. A simple differential backup and restore circuitry is proposed, achieving sub-fJ/cell total energy per backup and restore operation at the 10-nm node. This leads to hundreds of times BET improvement over existing ReRAM nvSRAM solutions. This nvSRAM also indicates the future FeFET design trends for such memory-logic synergy. [ABSTRACT FROM PUBLISHER]

Negative capacitance FETs (NCFETs) have attracted significant interest due to their steep-switching capability at a low voltage and the associated benefits for implementing energy-efficient Boolean logic. While most existing works aim to avoid the ID – VG hysteresis in NCFETs, this paper exploits this hysteresis feature for logic-memory synergy and presents a custom-designed nonvolatile NCFET D flip-flop (DFF) that maintains its state during power outages. This paper also presents an NCFET fabricated for this purpose, showing <10 mV/decade steep hysteresisedges and high, up to seven orders inmagnitude, R\text {DS} ratio between the two polarization states. With a device-circuit codesign that takes advantage of the embedded nonvolatility and the high R\text {DS} ratio, the proposed DFF consumes negligible static current in backup and restore operations, and remains robust even with significant global and local ferroelectric material variations across a wide 0.3–0.8 V supply voltage range. Therefore, the proposed DFF achieves energy-efficient and low-latency backup and restore operations. Furthermore, it has an ultralow energy-delay overhead, below 2.1% in normal operations, and operates using the same voltage supply as the Boolean logic elements with which it connects. This promises energy-efficient nonvolatile computing in energy-harvesting and power-gating applications. [ABSTRACT FROM PUBLISHER]