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In this work, the mechanism of reliability of high resistance state (HRS) in AlOxNy-based resistive random access memory (RRAM) has been studied. The Ta/AlOxNy/Pt devices with high quality of the Schottky contact in the Ta/AlOxNy interface show excellent HRS reliability and low power consumption characteristics. We propose that the resistive switching (RS) process is caused by the migration of oxygen ions in the AlOxNy-based RRAM device, and the quality of the metal–semiconductor Schottky contact directly determines HRS reliability in AlOxNy-based RRAM. [ABSTRACT FROM AUTHOR]

This Letter studies the effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing. We compared I–V characters of devices fabricated at different annealing temperatures. By increasing the crystallinity of an AlN film, switching voltages and the memory window increase. Meanwhile, the reliability of the device improves. It is found that the electron conduction mechanism fits in with the space-charge-limited conduction model. Based on the above phenomena, we purpose that the crystallization leads to a decrease in vacancies within the AlN film, while it enhances local effects of grain boundaries on the electron transport. Both of these conclusions can result in an increase in switching voltages and the memory window. This paper can provide a platform for further studies on improving the performance of AlN-based devices. [ABSTRACT FROM AUTHOR]

This Letter studies the effect of the nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based resistive random access memory. We prepared a single layer AlN device and four types of AlN/PbS quantum dot stacked structure devices with different concentrations. Compared with the single layer AlN device, the AlN/PbS quantum dot stacked structure devices exhibit excellent resistive switching characteristics, such as forming-free, low power consumption, and excellent stability. We propose that the resistive switching process is determined by the migration of nitrogen ions and the lead sulfide (PbS) quantum dot layer as a natural nitrogen ion reservoir, which can improve the resistive switching characteristics. Moreover, the size of the natural nitrogen ion reservoir can be modulated by changing the concentration of quantum dots. [ABSTRACT FROM AUTHOR]