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Using in situ low-energy electron microscopy and density functional theory calculations, we follow the growth of monolayer graphene on Pd(111) via surface segregation of bulk-dissolved carbon. Upon lowering the substrate temperature, nucleation of graphene begins on graphene-free Pd surface and continues to occur during graphene growth. Measurements of graphene growth rates and Pd surface work functions establish that this continued nucleation is due to increasing C adatom concentration on the Pd surface with time. We attribute this anomalous phenomenon to a large barrier for attachment of C adatoms to graphene coupled with a strong binding of the non-graphitic C to the Pd surface. [ABSTRACT FROM AUTHOR]

Graphene forms from a relatively dense, tightly bound C-adatom gas when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C-adatom density suggests that growth proceeds by addition of C atom clusters to the graphene edge. The generality of this picture has now been studied by use of low-energy electron microscopy (LEEM) to observe graphene formation when Ru(0001) and Ir(111) surfaces are exposed to ethylene. The finding that graphene growth velocities and nucleation rates on Ru have precisely the same dependence on adatom concentration as for elemental C deposition implies that hydrocarbon decomposition only affects graphene growth through the rate of adatom formation. For ethylene, that rate decreases with increasing adatom concentration and graphene coverage. Initially, graphene growth on Ir(111) is like that on Ru: the growth velocity is the same nonlinear function of adatom concentration (albeit with much smaller equilibrium adatom concentrations, as we explain with DFT calculations of adatom formation energies). In the later stages of growth, graphene crystals that are rotated relative to the initial nuclei nucleate and grow. The rotated nuclei grow much faster. This difference suggests firstly, that the edge-orientation of the graphene sheets relative to the substrate plays an important role in the growth mechanism, and secondly, that attachment of the clusters to the graphene is the slowest step in cluster addition, rather than formation of clusters on the terraces. [ABSTRACT FROM AUTHOR]

Using low-energy electron microscopy,we find that the mechanisms of graphene growth on Ir(111) depend sensitivelyon island orientation with respect to Ir. In the temperature rangeof 750–900 °C, we observe that growing rotated islandsare more faceted than islands aligned with the substrate. Further,the growth velocity of rotated islands depends not only on the C adatomsupersaturation but also on the geometry of the island edge. We deducethat the growth of rotated islands is kink-nucleation-limited, whereasaligned islands are kink-advancement-limited. These different growthmechanisms are attributed to differences in the graphene edge bindingstrength to the substrate. [ABSTRACT FROM AUTHOR]