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A new ohmic contact technology on diamond with low resistivity is presented. A Si/Al metallisation is used and leads to a 7×10-6 Ω.cm2 specific contact resistivity, measured by the transfer length method. Comparison is made between this technology and the Ti/Pt/Au traditional technology. Both technologies show very good electrical, thermal and mechanical characteristics. [ABSTRACT FROM AUTHOR]

Mechanical suitability of ohmic contacts among the select metallization systems, deposited on a p-type heavily boron-doped homoepitaxial diamond layer, was evaluated via mechanical tests on the nanoscale. Two candidate metallization systems were considered: Si/Al and Ti/Pt/Au. Metallizations were performed using two different techniques: plasma-enhanced chemical vapour deposition and “lift-off”. Effectiveness of the techniques was assessed via mechanical tests on the microscale and the nanoscale. Nano-indentation experiments were performed to determine the mechanical properties of the layers. Nano-scratching experiments were used to evaluate the mechanical adhesion on the diamond substrate. Scanning electron microscopy was applied for observation of the morphology of the surface and the indent and for detecting defects. [ABSTRACT FROM AUTHOR]