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Abstract: We report on rational synthesis and optical characteristics of highly crystallined ZnO nanorods which were grown by a facile chemical vapor transport method. Temperature-dependent photoluminescence spectra of as-fabricated ZnO nanorods are dominated by near-band-edge emission with a characteristic fine structure due to high crystallinity. Furthermore, the recombination emission involving carrier dynamics of near-band-edge emission in ZnO nanorods was systematically investigated by temperature-dependent time-resolved photoluminescence spectroscopy. Recombination peaks pertaining to the exciton emissions are monitored and resolved in both temporal and spatial regimes. [Copyright &y& Elsevier]

• Optical properties and ordering degree of InGaP were investigated by Zn doping. • Characterization of optical properties of InGaP by tmperature-dependent PL. • The ordering degree of the InGaP was calculated from the band gap at low temperature. • The study found that Zn doping leads to a decrease in the ordering degree of InGaP. In 0.49 Ga 0.51 P is highly promising due to its favorable lattice-matching properties with GaAs, making it well-suited for various device applications. This study investigated the influence of Zn doping on the ordering and optical properties of In 0.49 Ga 0.51 P grown on GaAs using metalorganic chemical vapor deposition. By precisely controlling the doping flow, the ordering degree of In 0.49 Ga 0.51 P was systematically modulated. The luminescence origin and bandgap characteristics of In 0.49 Ga 0.51 P were examined through temperature-dependent photoluminescence and Hall measurements. The findings demonstrate a noticeable peak shift, accompanied by a increase in the bandgap and a corresponding decrease in the ordering degree as the Zn concentration increases. [ABSTRACT FROM AUTHOR]

Abstract: We report a systematic study on modulating optical properties in gallium antimonide (GaSb) with the sulfur surface passivation. Compared with the pristine sample, the intensity of the photoluminescence (PL) emission from the passivated GaSb was dramatically enhanced about 15 times at room temperature. The temperature-dependent surface states were further investigated via the low temperature PL spectroscopy. The bound-edge-related transition emission (BE4) at 795meV and the residual acceptor associated emission located at 777meV were identified clearly at 10K. The observed passivation effects on the photoluminescence characteristics evolution of GaSb are discussed in detail. [Copyright &y& Elsevier]