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Nanostructured thin films on a silicon substrate were obtained by high-frequency repetitively pulsed (f ~ 10–15 kHz) laser action with a wavelength of 1.064 μm and a power density q = 54 MW/cm2 on La0.4Ba0.6CoO3 ceramics at a vacuum chamber pressure p = 2.2 Pa. The morphology of the obtained films was studied using atomic-force microscopy. Features of transmission spectra in the visible, near-, and mid-IR regions were revealed. The electrophysical properties of the La0.4Ba0.6CoO3 structure were analyzed. [ABSTRACT FROM AUTHOR]

Nanostructured thin films on a silicon substrate were obtained by high-frequency pulse-periodic laser action (f ~ 10–15 kHz) with wavelength λ = 1.064 μm and power density q = 85 MW/cm2 on zinc oxide ceramic doped with scandium oxide in a vacuum chamber with pressure p = 2·10–2 mm Hg. The morphology of the obtained films was studied by atomic-force microscopy. Features of the transmission spectra in the visible and near and middle infrared regions were shown. The luminescence spectra obtained by excitation at various wavelengths were practically unchanged. The electrophysical properties of the ZnO + 0.9% Sc2O3/Si heterostructure were analyzed. It was established that the main conduction mechanism is current limited by space charge in an oxide film with deep traps. [ABSTRACT FROM AUTHOR]