Search

We investigated the 1443.9 nm laser characteristics of Nd:GdLuAG crystal. Diode-end-pumping configuration was employed under both continuous-wave (CW) and passively Q- switched operations. For CW operation, the maximum average output power was 1.36 W with a slope efficiency of 15%. By using a V 3+ :YAG crystal as the saturable absorber, we obtained the maximum average output power of 164 mW under Q -switched operation. The corresponding pulse energy was 29.3 μJ and pulse duration was 59 ns. [ABSTRACT FROM AUTHOR]

We report a power scaled laser operation of diode-pumped Nd:LSO lasers at 1.35 μm. With single-end-pumping scheme, maximum output power reaches 0.77 W at 1358.99 nm in free-running mode. By inserting an etalon, wavelength tuning can be realized with tuning range of at least 6.5 nm from 1356.95 nm to 1363.39 nm. Simultaneous dual-wavelength laser at 1331.63 and 1357.43 nm can also be generated with total output power of 0.19 W, for the first time to our knowledge. Further power scaling to 1.03 W of the 1358.99 nm laser is finally achieved by recycling the remaining pump power, which represents the highest output power so far for 1.3 μm silicate lasers. [ABSTRACT FROM AUTHOR]

Abstract: A diode-end-pumped passively Q-switched ytterbium-doped yttrium aluminum garnet (Yb:YAG) laser with gallium arsenide (GaAs) wafer as saturable absorber has been realized. In the experiment, two pieces of GaAs wafers with respective thicknesses of 400 and 700 μm were used respectively. The output laser characteristics such as the pulse duration, single pulse energy and peak power, have been measured. By using thicker GaAs wafer as saturable absorber, a minimum pulse duration of 3.5ns was obtained with an average output power of 361mW and a pulse repetition rate (PRR) of 25kHz, corresponding to a single pulse energy of 19.6μJ and a peak power of 5.7kW. With a 400μm-thick GaAs wafer as saturable absorber, a maximum output power of 469 mW was achieved. The central wavelength of the laser was measured to be 1050.4nm at pump power of 7.8W and dual wavelength operation peaked at 1049.3nm and 1051.6nm was observed at a high pump power of 10W. By considering Gaussian spatial distribution and the thermal effects in the gain medium, the coupled rate equations for passively Q-switched Yb:YAG laser with GaAs saturable absorber were given. [Copyright &y& Elsevier]

Abstract: We report on the sub-100fs pulse generation in a diode pumped Yb3+:Sc2SiO5 (Yb:SSO) laser. Pumped by a 976nm single emitter diode and mode-locked with a SESAM, the laser generated stable mode locked pulses with 71fs duration, 89MHz repetition rate, and an average power of 38mW at 1044.6nm under the incident pump power of 6.5W. To the best of our knowledge, this is the shortest pulse ever produced from an Yb3+ doped orthosilicate crystal laser. [Copyright &y& Elsevier]

Antiphase dynamics has been observed experimentally for the laser modes operation in a laser-diode-pumped Q-switched microchip Yb:YAG laser with GaAs as a saturable absorber in the presence of spatial hole-burning. The Q-switched pulses sequences of two modes at different pump power have been obtained. The experimental results have shown that the pulses sequences displayed classic antiphase dynamics. [Copyright &y& Elsevier]