1. ALL-OPTICAL SWITCHES BASED ON GaAs/AlGaAs QUANTUM DOTS VERTICAL CAVITY.
- Author
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ISMAIL, F. D., JOMTARAK, R., TEEKA, C., ALI, J., and YUPAPIN, P. P.
- Subjects
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QUANTUM dots , *OPTICAL communications , *ATOMS , *SIGNAL processing , *ELECTRIC switchgear , *WAVELENGTHS , *OPTICAL reflection - Abstract
In this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. Two essential aspects of this novel device have been investigated, which include the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. The vertical-reflection-type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As and 25 periods for the front and back mirrors, respectively. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, the 65 nm dimension of Si was recommended to deposit within a 20 nm AlAs QW. Results obtained have shown that all-optical switching via the QD excited states has been achieved with a time constant down to 275-fs and over 29.5 nm tunable wavelengths. These results demonstrated that QDs within a vertical cavity have great potential to realize low-power, consumption polarization-insensitive and micrometer-sized switching devices for future optical communication and signal processing systems. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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