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Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to − 0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques. [ABSTRACT FROM AUTHOR]

Dy 3+ -doped Y 2 O 3 ceramics were fabricated by Spark Plasma Sintering method. The effect of sintering temperature on the microstructure and the optical transmittance of the ceramics was studied. The maximum in-line transmittance of Dy:Y 2 O 3 ceramics with thickness of 1 mm was 74.5% at 574 nm when sintering temperature was 1550 ℃. The spectroscopic parameters were determined by Judd-Ofelt theory based on the room temperature absorption spectra. The peak emission cross section for the 4 F 9/2  →  6 H 13/2 transition was calculated to be 0.569 × 10 −20  cm 2 . The fluorescence decay curve and quantum efficiency of the 4 F 9/2 multiplet were measured to be 269.2 μs and 37.1%, respectively. [ABSTRACT FROM AUTHOR]

The crystal growth, optical spectra and lifetime of Dy:CaGdAlO 4 crystal were investigated for the first time to our best knowledge. Single Dy:CaGdAlO 4 crystal with size of Φ4 × 40 mm 3 was grown by floating zone method. The peak absorption cross-sections were calculated to be 2.43 × 10 −21 cm 2 and 1.28 × 10 −21 cm 2 at 453 nm for σ and π polarizations. The Judd-Ofelt (JO) parameters of Ω 2 , Ω 4 and Ω 6 were calculated to be 1.8 × 10 −20 cm 2 , 1.0 × 10 −20 cm 2 and 0.5 × 10 −20 cm 2 , respectively. The emission cross-sections were calculated to be 0.51 × 10 −20 cm 2 and 0.55 × 10 −20 cm 2 for σ and π polarizations. The fluorescence decay time is 222 μs. The results indicate that the Dy:CaGdAlO 4 crystal is a potential candidate for yellow laser operation. [ABSTRACT FROM AUTHOR]

Abstract: Absorption and emission spectral properties of GdVO4 single crystal doped with Ho3+ ions were investigated at room temperature. Polarized absorption cross section is calculated in the range of 400–2200nm. Results were analyzed and parameters were calculated based on Judd-Ofelt theory, the emission spectrum shows that the emission intensity around the wavelength of 546nm associated with transition 5S2 → 5I8 is much stronger than other bands in the observed range and potentially enable the green light output around this emission band in this crystal. [Copyright &y& Elsevier]

The Czochralski crystal growth of 50 at.% Yb:YAG single crystal was reported. The absorption spectrum, emission spectrum and fluorescence lifetime of Yb:YAG crystal were measured at room temperature. The spectroscopic parameters of nominal 50 at.% Yb:YAG crystal were compared with that of Yb:YAG crystal with low doping level. The results indicate that Yb:YAG crystals with high doping level are potential candidates used for compact, efficient thin chip lasers. [Copyright &y& Elsevier]

Abstract: In this paper, single crystal of ytterbium (Yb) doped Ca5(PO4)3F (FAP) has been grown along the c-axis by using the Czochralski method. The segregation coefficients of Yb3+ in the Yb:FAP crystal has been determined by ICP-AES method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of the Yb:FAP crystal has been also measured at room temperature. In the absorption spectra, there are two absorption bands at 904 and 982nm, respectively, which are suitable for InGaAs diode laser pumping. The absorption cross-section (σ abs) is 5.117×10−20 cm2 with an FWHM of 4nm at 982nm. The emission cross-section (σ em) is 3.678×10−20 cm2 at 1042nm. Favorable values of the absorption cross-section at about 982nm are promising candidates for laser diode (LD) pumping. [Copyright &y& Elsevier]

YScO 3 single crystal co-doped with Ho3+ and Pr3+ ions has been successfully grown by the Czochralaki method. The absorption spectrum, fluorescence spectrum and fluorescence decay curve were measured at room temperature. The absorption cross section of Ho,Pr:YScO 3 at 649 nm and 1130 nm was calculated to be 0.93 × 10−20 cm2 and 0.32 × 10−20 cm2, respectively. Judd-Ofelt (J-O) theory was performed to evaluate the spontaneous emission probabilities and the radiative lifetimes. Ho,Pr:YScO 3 exhibited strong emission at 2040 nm and 2890 nm with a emission cross section of 0.80 × 10−21 cm2 and 1.22 × 10−20 cm2, respectively. The fluorescence lifetime of the Ho3+:5I 6 and 5I 7 levels were calculated to be 0.31 ms and 5.89 ms, respectively. All the results indicate that the Ho,Pr:YScO 3 crystal could be a potential laser material for 2.9 μm laser operation. • Ho3+,Pr3+ co-doped YScO 3 was grown by the Czochralski method. • The crystal structure, absorption and emission spectra were investigated. • The effect of Pr3+ on the spectroscopic properties of Ho3+ was evaluated. [ABSTRACT FROM AUTHOR]

Tb3+ doped Y 3 Al 5 O 12 (Tb:YAG) single crystal has been grown by the Czochralski method. Optical spectroscopic characterization of the crystal was performed in order to evaluate the potential for the visible laser application. Based on the Judd–Ofelt theory, the spectroscopic parameters Ω t (t = 2, 3, 6), spontaneous transition probabilities, fluorescence branch ratio and the radiation lifetime of excited state 5D 4 state were calculated. The green emission cross section of 5D 4 →7F 5 transition were calculated to be 1.23 × 10−21 cm2 , The yellow emission cross section of 5D 4 →7F 4 transition were calculated to be 7.08 × 10−23 cm2. The decay time of the 5D 4 level was measured to be 3.12 ms, which is in reasonable agreement with the radiation lifetime of 3.30 ms. All the results indicate the potential of Tb:YAG crystal as a visible laser material. • Tb:YAG crystal was grown by Czochralski method. • Judd-Ofelt theory was used to analyze the spectroscopic properties of Tb:YAG for the first time. • Tb:YAG crystal is a potential laser material for yellow and green laser output. [ABSTRACT FROM AUTHOR]