Search

Low threshold, high efficient Raman laser output has been realized from a compact, diode end-pumped, self-stimulating Nd 3+ :GdVO 4 Raman laser. Maximum Raman output power of 100 mW was achieved at a pulse repetition frequency (PRF) of 10 kHz with 1.8 W pump power. The optical efficiency is 5.6% from diode to Raman laser and the slope efficiency is 8%. The lowest threshold for the SRS process is only 400 mW at a PRF of 5 kHz. By generating second harmonics using a LBO crystal, 3 mW 588 nm yellow laser was also produced. A strong blue emission was observed in the Nd 3+ :GdVO 4 crystal when the Raman laser output, we contribute this for the upconversion of the Nd 3+ in the crystal.

A compact diode-end-pumped passively Q-switched Nd3+:GdVO4/Cr4+:YAG self-Raman laser at 1176?nm is demonstrated. When the T0 = 80% Cr4+:YAG saturable absorber is inserted into the cavity, the maximum Raman laser output reaches 175?mW with 3.8?W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5??J, 1.8?ns, and 38.5?kHz, respectively. There is strong blue emission (about 350?400?nm) can be observed in the Nd3+:GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd3+ ions.

A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd3+:YVO4 self-Raman laser. The threshold is 370 mW at a pulse repetition frequency of 5 kHz. The maximum Raman laser output is 182 mW with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30 kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.