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HfO2-based solid-state incandescent light emission devices (SSI-LEDs) with conductive filament-related light emission mechanism are promising candidates for future light emission devices. In this letter, the temperature impact on the electrical and light emission properties of SSI-LEDs has been studied. The increase of the substrate temperature of the device leads to a reduction of the hard breakdown voltage and a decrease of the lighting efficiency. Both behaviors can be attributed to the Si-diffusion-assisted filament mechanism. By understanding such mechanism, we demonstrate a patterned wafer approach, geometrically confining the electrical field to effectively enhance the lighting performance of HfO2 SSI-LED devices. Our results support the explanation of the underlying light mechanism and open an effective pathway to improve the performance of the SSI-LED devices.

We present n-doped germanium-on-silicon (Ge-on- Si) antennas fabricated with CMOS mainstream methods, showing resonances between 0.1 and 0.7 THz for sensing applications. After surface functionalization with α-lipoic acid, a red-shift of the antenna resonance is observed, as demonstrated by THz time domain spectroscopy. Similar results are obtained with silicon nitride (Si 3 N 4 )-coated antennas, enabling microfluidic integration. Finally, we compare antennas of bow-tie slots to antennas fabricated via maskless photolithography.

This study reports on a novel vacuum epitaxial lift-off (VELO) process to reuse the GaAs substrates in light-emitting diode (LED) production. The method is based on an epitaxial lift-off technique, whose application is however limited to flexible wafers, as gaseous reaction products (e.g. AsH 3 ) formed during the etching of AlAs with hydrofluoric acid are trapped within the wafer stack. In the developed VELO process, an applied vacuum of ∼ 5000 Pa to the bonded wafer stack removes such detrimental reaction gases, allowing a separation of hard substrate/carrier systems. The VELO process is evaluated with a state-of-the-art thin-film light-emitting diode (TF-LED) phosphide-based epitaxial structure with a buried AlAs sacrificial layer and a simplified LED chip construction at 4-in. wafer level. Characterization of the so-processed LEDs using high-resolution x-ray diffraction, μ -photoluminescence and electrical testing reveal that the VELO TF-LEDs show a comparable performance like to released chips by using conventional grinding/polishing and etching of the GaAs substrate. As our VELO process is non-destructive to the substrate, the GaAs wafers can be reused, enabling lower costs for LED production and reduced toxic waste to establish a green semiconductor production.

Crystal defects, present in ~100 nm GaAs nanocrystals grown by metal organic vapour phase epitaxy on top of (0 0 1)-oriented Si nanotips (with a tip opening 50–90 nm), have been studied by means of high-resolution aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. The role of 60° perfect, 30° and 90° Shockley partial misfit dislocations (MDs) in the plastic strain relaxation of GaAs on Si is discussed. Formation conditions of stair-rod dislocations and coherent twin boundaries in the GaAs nanocrystals are explained. Also, although stacking faults are commonly observed, we show here that synthesis of GaAs nanocrystals with a minimum number of these defects is possible. On the other hand, from the number of MDs, we have to conclude that the GaAs nanoparticles are fully relaxed plastically, such that for the present tip sizes no substrate compliance can be observed.

In this paper we have deposited structures comprising a stack of 10 periods made of 15 nmthick Ge multi quantum well (MQW) enclosed in 15 nm-thick Si0.2Ge0.8 barrier have been deposited on SiGe virtual substrates (VS) featuring different Ge contents in the 85% - 100% Ge range to investigate the influence of heteroepitaxial strain on the Si0.2Ge0.8 and Ge growth. With increasing Ge concentration of the VS, growth rate of the Si0.2Ge0.8 in the MQW increases. Si incorporation into the Si0.2Ge0.8 layer becomes also slightly higher. However, almost no influence of the growth rate is observed for Ge growth in the MQW. We argue that the increased tensile strain promotes the Si reaction at the surface. In the case of the Si0.2Ge0.8 growth on Ge, we observe a smeared interface due to the Ge segregation during the growth. Furthermore, we observe that this interface width increases with increasing Ge concentration of VS. We attribute this observation to the increased segregation of Ge driven by the increased strain energy accumulated in the in the Si0.2Ge0.8 layers. We also observed that the MQW layer “filters-out” threading dislocations formed in the VS.

Exploiting intersubband transitions in Ge/SiGe quantum cascade devices provides a way to integrate terahertz light emitters into silicon-based technology. With the view to realizing a Ge/SiGe Quantum Cascade Laser, we present the optical and structural properties of n-type strain-symmetrized Ge/SiGe asymmetric coupled quantum wells grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. We demonstrate high material quality of strain-symmetrized structures and heterointerfaces as well as control over inter-well coupling and electron tunneling. Motivated by the promising results obtained on ACQWs, which are the basic building block of a cascade structure, we investigate, both experimentally and theoretically, a Ge/SiGe THz QCL design, optimized through a non-equilibrium Green’s function formalism

The imaging and sensing technology operating in the THz region of the electromagnetic spectrum has a number of applications, with demonstrator products already available on the market for oncology imaging, production monitoring, and non-destructive test [1]. However, the THz sources now at hand are still bulky and too expensive for expanding this technology to other proposed applications, which also include, among other, THz bandwidth photonics and security imaging. A higher level of integration with control electronics, a lower production cost, and a broader wavelength range of emission towards the far-infrared, are all desirable features to expand the fields of application of THz radiation. N-type Ge/SiGe quantum cascade structures grown on top of a Si(001) substrate are particularly promising for realizing a Si based THz source [2]. The low effective mass and long non-radiative relaxation times due to the non-polar nature of the material, are expected to i) provide gain values close to those demonstrated in III-V quantum cascade structures at 4 K, and ii) to potentially enable 300 K operation. In this presentation we will discuss the optical and structural properties of n-type s-Ge/SiGe multi-quantum wells and asymmetric coupled quantum wells grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition [3]. Extensive structural characterization obtained by scanning transmission electron microscopy (STEM), atomic probe tomography (APT) and X-ray diffraction shows the high material quality of strain-symmetrized structures (up to 5 micron active region thickness) and heterointerfaces (featuring interface roughness below 0.2 nm), down to the ultrathin barrier limit (about 1 nm). By performing THz absorption spectroscopy measurements combined to theoretical modeling on different asymmetric coupled quantum well systems (with varying large-well width or barrier thickness), we unambiguously demonstrated inter-well coupling and wavefunction tunneling [3]. The agreement between experimental data and simulations allowed us to characterize the tunneling barrier parameters and, in turn, achieve a highly-controlled engineering of the electronic structure in forthcoming unipolar cascade systems based on n-type Ge/SiGe multi quantum-wells. Furthermore, by pump-and-probe, and time domain spectroscopic data with a thorough theoretical modeling, we will show that this material system is indeed promising as active material in quantum cascade lasers (QCL). We found i) narrow intersubband (ISB) absorption lines; ii) relatively long non-radiative ISB relaxation times at high temperature; iii) relaxation times for different ISB transitions favorable to population inversion. Leveraging on the promising results obtained by spectroscopy experiments, we theoretically investigate an electrically-pumped Ge/SiGe THz QCL through a non-Equilibrium Green Function formalism (nextnano.QCL), using as material parameters to model the scattering processes the values estimated from the analysis of the optical experimental data [4]. As expected, due to the weaker interaction with the phonon field with respect to III-V based devices, we find a lower impact of the temperature on the gain spectrum. In addition, simulations show that the interface roughness values measured on our samples allows to achieve gain overcoming the losses of double-metal waveguides at room temperature. We believe that the present results will motivate new experimental efforts aimed at demonstrating room-temperature operation in group IV QCL THz devices. References [1] D. J. Paul, Laser Photon. Rev. 4, 610 (2010). [2] K. Driscoll, and R. Paiella, J. Appl. Phys. 102, 093103 (2007). [3] C. Ciano, M. Virgilio, M. Montanari, L. Persichetti, L. Di Gaspare, M. Ortolani, L. Baldassarre, M. H. Zollner, O. Skibitzki, G.Scalari, J. Faist, D. J. Paul, M. Scuderi, G. Nicotra, T. Grange, S. Birner, G. Capellini, and M. De Seta, Accepted in Phys. Rev. Appl., 11, 014003 (2019). [4] T. Grange, D. Stark, G. Scalari, J. Faist, L. Persichetti, L. Di Gaspare, M. De Seta, M. Ortolani, D.J. Paul, G. Capellini, S. Birner and M. Virgilio, Submitted to Applied Physics Letters. Preprint available at https://arxiv.org/pdf/1811.12879.pdf.

We explore saturable absorption and terahertz photoluminescence emission in a set of n-doped Ge/SiGe asymmetric coupled quantum wells, designed as three-level systems (i.e., quantum fountain emitter). We generate a non-equilibrium population by optical pumping at the 1→3 transition energy using picosecond pulses from a free-electron laser and characterize this effect by measuring absorption as a function of the pump intensity. In the emission experiment we observe weak emission peaks in the 14–25 meV range (3–6 THz) corresponding to the two intermediate intersubband transition energies. The results represent a step towards silicon-based integrated terahertz emitters.

The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism.

The efficient integration of electronic and optoelectronic functions on a single chip within a CMOS-compatible material and technology platform is witnessing the next disruptive innovation in the microelectronics industry. Among the proposed approaches to “siliconize” photonics, the most ambitious is to develop a monolithic Si-based light source. The main challenge is the indirect bandgap of Si which hinders efficient light emission. A number of different solutions has been suggested to break down this material limitation, and the optimal strategy depends on the specific spectral range of application. In the THz range, quantum cascade laser (QCL) architectures based on the Group-IV material system have been predicted as viable potential sources up to room temperature1-3, by exploiting intersubband (ISB) transitions in the conduction band of n-type, Ge-rich Ge/SiGe multi-quantum well (MQW) heterostructures3. In this paper, we will show that the interface quality and threading dislocation density4 in this material system have finally reached the level required for possibly enabling, within a wide temperature range, a material gain larger than the cavity losses5. From the structural standpoint, we report on the growth by ultra-high-vacuum chemical vapor deposition (UHV-CVD) of strain-compensated QCL stacks with a thickness up to 10 µm, demonstrating by X-ray diffraction and scanning transmission electron microscopy their high crystalline quality and remarkable growth reproducibility [Fig. 1(a)]. We will also describe optimized designs obtained in waveguide modelling with which waveguide losses comparable to III-V architectures are achieved6. In the model system of n-type Ge-rich asymmetric coupled quantum wells (ACQWs)7,8, being the building block of a QCL structure, we will prove a high degree of control on the engineering at the nanoscale the intersubband electronic spectrum and the wavefunctions relevant for tunneling processes, which allowed us the observation of photoluminescence at 4 THz after optical excitation using a free-electron laser (FEL)9. In addition, we will present a systematic calibration study of the material parameters controlling the interface roughness (IFR) and electron-phonon scatterings in n-type Ge/SiGe MQWs by combining experimental pump-probe data with a numerical model of ISB carrier dynamics including inelastic and elastic scattering channels. The time evolution of subband populations after FEL optical pumping is investigated as a function of the MQW design geometry, comparing symmetric and stepwise configurations, and analyzed by varying the subband energy spacing changing the well width. As a matter of fact, these material parameters critically affect the outcomes of the non-equilibrium Green’s function calculations widely used for predicting quantum transport and, ultimately optical gain of QCL devices10,11 and so to guide the optimization of proposed device designs. Hitherto, however, in most cases, the adopted values for these material parameters were not calibrated against experiments. For a proper calibration of the deformation potentials, we studied the non-radiative lifetimes as a function of the subband spacing on a set of symmetric MQWs of different Ge well widths. The corresponding α2D absorption spectra are reported in the left panels Fig. 1(b-d). Differential transmission spectra from single-color pump-probe experiments and model simulations indicate [Fig. 1(e-g)] that the electron-phonon coupling is much less effective than that expected from the bulk deformation potentials reported by Jacoboni et al.12. In particular, we found that the relaxation mediated by the emission of intervalley OPs is suppressed in low-dimensional multilayer structures while the intravalley OP scattering is described by a reduced effective deformation potential, thus explaining the observation of relaxation times larger than 10 ps above both the OP energy thresholds in single-color pump probe spectroscopy experiments. These results are crucial for developing adequate simulation frameworks and specific design approaches for achieving optical gain in silicon-compatible quantum cascade emitters. [1] K. Driscoll et al., Appl. Phys. Lett. 89, 191110 (2006). [2] K. Driscoll et al., J. Appl. Phys. 102, 093103 (2007). [3] D. J. Paul, Laser & Photonics Reviews 4, 610 (2010). [4] T. Grange et al., Physical Review Applied 13, 044062 (2020). [5] T. Grange et al., Appl. Phys. Lett. 114, 111102 (2019). [6] K. Gallacher et al., Opt. Express 28, 4786 (2020). [7] C. Ciano et al., Physical Review Applied 11, 014003 (2019). [8] L. Persichetti et al., Crystals 10, 179 (2020). [9] C. Ciano et al., Opt. Express 28, 7245 (2020). [10] A. Valavanis et al., Phys. Rev. B 83, 195321 (2011). [11] C. Jirauschek et al., Applied Physics Reviews 1, 011307 (2014). [12] C. Jacoboni et al., Phys. Rev. B 24, 1014 (1981). Figure 1

Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with a Au nuclei density below 0.25 µm-2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si-Au droplets with SixGe1-x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within 〈110〉 directions on the substrate and NWs were mainly bounded by two 55° inclined {111} facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of X-ray diffraction measurements.

Lateral solid phase epitaxy (L-SPE) in non-doped or in-situ B-doped amorphous- (a-) SiGe deposited on SiO 2 patterned Si(100) wafers by in-situ postannealing in reduced pressure chemical vapor deposition system was investigated for possible heterojunction bipolar transistor (HBT) base link resistivity improvement. Using Si 2 H 6 as Si precursor gas, an epitaxial and amorphous layer was grown on the mask window and on the SiO 2 area, respectively. By inserting a-Si buffer underneath, the deposited a-SiGe surface became smoother. After the L-SPE process, an improved L-SPE length was observed due to suppressed random nucleation on SiO 2 . The L-SPE length increased with increasing postannealing time and saturated due to random poly-grain formation on the SiO 2 . At the same L-SPE time, increased L-SPE length was observed at higher temperature and at higher Ge concentration. With increasing B concentration in the a-SiGe, the L-SPE length firstly increased. However, after reaching 2 × 10 19 atom/cm 3 , the L-SPE length reduced again down to the undoped case. These results of L-SPE process might have potential to improve dynamic performance of SiGe HBT by reducing the base link resistivity by widening the monocrystalline region around bipolar window.

We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics., 7 pages, 3 figures

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications., Scientific Reports, 6, ISSN:2045-2322

The solid phase epitaxy (SPE) of undoped amorphous Si (a-Si) deposited on SiO2 patterned Si(001) wafers by reduced pressure chemical vapor deposition (RPCVD) using a H2–Si2H6 gas system was investigated. The SPE was performed by applying in-situ postannealing directly after deposition process. By transmission electron microscopy (TEM) and scanning electron microscopy, we studied the lateral SPE (L-SPE) length on sidewall and mask for various postannealing times, temperatures and a-Si thicknesses. We observed an increase in L-SPE growth for longer postannealing times, temperatures and larger Si thicknesses on mask. TEM defect studies revealed that by SPE crystallized epi-Si exhibits a higher defect density on the mask than at the inside of the mask window. By introducing SiO2-cap on the sample with 180 nm Si thickness following postannealing at 570 °C for 5 h, the crystallization of up to 450 nm epi-Si from a-Si is achieved. We demonstrated the possibility to use this technique for SiGe:C heterojunction bipolar transistor (HBT) base layer stack to crystallize Si-buffer layer to widen the monocrystalline region around the bipolar window and to improve base link resistivity of the HBT.

The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attracting increasing interest and research effort. One way to realize this without threading and misfit dislocations is the so-called nanoheteroepitaxy approach. We demonstrate that a modified Si nanostructure approach with nanopillars or bars separated by TEOS SiO2 can be used successfully to deposit SiGe dots and lines free of misfit dislocations. It was found that strain relaxation in the pseudomorphically grown SiGe happens fully elastically. These studies are important for the understanding of the behavior of nanostructured Si for the final goal of Ge integration via SiGe buffer.

In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate high quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys directly grown on Si(001). The GeSn was grown by molecular beam epitaxy at relatively high temperatures up to 750 degrees C on pre-patterned Si nano-pillars embedded in a SiO2 matrix. The best compromise between selective GeSn growth and homogenous Sn incorporation of 1.4% was achieved at a growth temperature of 600 degrees C. X-ray diffraction measurements confirmed that our growth approach results in both fully relaxed GeSn nano-islands and negligible Si interdiffusion into the core of the nanostructures. Detailed transmission electron microscopy characterizations show that only the small GeSn/Si interface area reveals defects, such as stacking faults. Importantly, the main part of the GeSn islands is defect-free and of high crystalline quality. The latter was further demonstrated by photoluminescence measurements where a clear redshift of the direct CC-CV transition was observed with increasing Sn content.

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications., Comment: Research paper, 22 pages, 7 figures

Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent germanium (Ge) islands selectively grown on nanotip-patterned Si(001) substrates. The silicon (Si)-tip-patterned substrate, fabricated by complementary metal oxide semiconductor compatible nanotechnology, features ∼50-nm-wide Si areas emerging from a SiO2 matrix and arranged in an ordered lattice. Molecular beam epitaxy growths result in Ge nanoislands with high selectivity and having homogeneous shape and size. The ∼850 °C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 atom % Ge). Nanotip-patterned wafers result in geometric, kinetic-diffusion-barrier intermixing hindrance, confining the major intermixing to the pedestal region of Ge islands, where kinetic diffusion barriers are, however, high. Theoretical calculations suggest that the thin Si/Ge layer at the interface plays, nevertheless, a significant role in realizing our fully coherent Ge nanoislands free from extended defects especially dislocations. Single-layer graphene/Ge/Si-tip Schottky junctions were fabricated, and thanks to the absence of extended defects in Ge islands, they demonstrate high-performance photodetection characteristics with responsivity of ∼45 mA W(-1) and an Ion/Ioff ratio of ∼10(3).

Phosphide-based thin-film light-emitting diodes (TF-LEDs) lattice-matched to GaAs are well established in optoelectronics in the wavelength range between 550 and 650 nm. In this work, we investigate the impact of oxidized AlAs to overlying phosphide-based pseudomorphically grown epitaxial structures. Oxidation of a buried AlAs sacrificial layer allows the separation of the grown TF-LED epitaxy from its substrates and enables an oxidation lift-off process. To evaluate the strain effect of progressing oxidation on the structure of the chip, we perform high-resolution x-ray diffraction analysis on as-grown, mesa-structured, semi-oxidized, and completely laterally oxidized chips. At each state, a pseudomorphic phosphide-based InAlP layer is found. The InAlP layer exhibits a tensile out-of-plane strain of approximately 0.20% and a compressive in-plane strain of approx. −0.19%. Additionally, scanning transmission electron microscopy, energy-dispersive x-ray spectroscopy, and μ-photoluminescence were used for in...

Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO2 matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro- and opto-electronics technology.

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO2-mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In0.5(Ga0.45Al0.55)0.5P (Q55) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.

We report a detailed structure and defect characterization study on gallium phosphide (GaP) layers integrated on silicon (Si) (001) via silicon-germanium (SiGe) buffer layers. The presented approach uses an almost fully relaxed SiGe buffer heterostructure of only 400 nm thickness whose in-plane lattice constant is matched to GaP—not at room but at GaP deposition temperature. Single crystalline, pseudomorphic 270 nm thick GaP is successfully grown by metalorganic chemical vapour deposition on a 400 nm Si0.85Ge0.15/Si(001) heterosystem, but carries a 0.08% tensile strain after cooling down to room temperature due to the bigger thermal expansion coefficient of GaP with respect to Si. Transmission electron microscopy (TEM) studies confirm the absence of misfit dislocations in the pseudomorphic GaP film but growth defects (e.g., stacking faults, microtwins, etc.) especially at the GaP/SiGe interface region are detected. We interpret these growth defects as a residue of the initial 3D island coalescence phase o...

To develop a III/V wide bandgap collector concept for future SiGe heterobipolar transistor performance increase, a heterostructure growth study of GaP on pseudomorphic 4° off-oriented Si0.8Ge0.2/Si(001) substrates was performed. For pseudomorphic GaP/Si0.8Ge0.2/Si(001) heterostructure growth, critical thickness of GaP on Si and maximum thermal budget for GaP deposition were evaluated. A detailed structure and defect characterization study by x-ray diffraction, atomic force microscopy, and transmission electron microscopy is reported on single crystalline 170 nm GaP/20 nm Si0.8Ge0.2/Si(001). Results show that 20 nm Si0.8Ge0.2/Si(001) can be overgrown by 170 nm GaP without affecting the pseudomorphism of the Si0.8Ge0.2/Si(001) layer. The GaP layer grows however partially relaxed, mainly due to defect nucleation at the GaP/Si0.8Ge0.2 interface during initial island coalescence. The achievement of 2D GaP growth conditions on Si0.8Ge0.2/Si(001) systems is thus a crucial step for achieving fully pseudomorphic h...

Employing electronic transitions in the conduction band of semiconductor heterostructures paves a way to integrate a light source into silicon-based technology. To date all electroluminescence demonstrations of Si-based heterostructures have been p-type using hole-hole transitions. In the pathway of realizing an n-type Ge/SiGe terahertz quantum cascade laser, we present electroluminescence measurements of quantum cascade structures with top diffraction gratings. The devices for surface emission have been fabricated out of a 4-well quantum cascade laser design with 30 periods. An optical signal was observed with a maximum between 8-9 meV and full width at half maximum of roughly 4 meV.

Terahertz (THz) semiconductor based quantum cascade lasers (QCLs) represent powerful and compact integrated light sources. To date they have been realized with various III-V materials where LO phonon emission becomes very effective as the temperature is increased, limiting the maximum operating temperature to 200K. To overcome this limitation, non-polar material systems are attractive because of their weaker e-phonon interaction. Theoretical studies have indicated n-type Ge/SiGe heterostructures where transport is associated to L electrons, as the most promising architecture [1]. Experimentally, sharp intersubband transitions in n-type strain compensated Ge/SiGe QWs have been observed in the 20–50 meV region [2]. Recently, non-equilibrium Green's functions calculations proved to be efficient in optimising high temperature performance of GaAs/AlGaAs THZ QCLs [3]. In the effort of realizing a Ge/SiGe THz QCL, we present here a QCL structure designed by means of non-equilibrium Green's functions [4], whose the bandstructure is reported in Fig.1(a). Epitaxial growth of strain-compensated Ge/SiGe heterostructure (≈1.5 μm thick) has been carried out by means of UHV-CVD yielding very good sample quality as visible from Fig.1(b). Mesa devices for transport experiments have been fabricated by dry etching and metallization. In Fig.1(c) a series of I-V curves as a function of the heatsink temperature display a thermally activated behaviour with E act ≃ 10 meV. From low temperature (4 K) magnetotransport [5] in a magnetic field parallel to the current direction shows characteristics oscillations. we can deduce an energy distance between the lasing states of E 23 =19.5 meV, in good agreement with the theoretical calculation. Optical experiments are ongoing and experimental results will be presented.