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90 results on '"Roland Teissier"'

1. Mid-IR lasers epitaxially grown on on-axis (001) Silicon

Author

Michael Bahriz, Ariane Meguekam, Marta Rio Calvo, Eric Tournié, Daniel A. Diaz-Thomas, Laura Monge-Bartolome, Zeineb Loghmari, Jean-Baptiste Rodriguez, Guilhem Boissier, Roland Teissier, Laurent Cerutti, Alexei N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Silicon photonics, Materials science, Silicon, business.industry, chemistry.chemical_element, Laser, Epitaxy, law.invention, Wavelength, [SPI]Engineering Sciences [physics], chemistry, law, Etching (microfabrication), Optoelectronics, Wafer, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

The integration of mid-IR lasers with Si-based platforms is needed for the development of smart sensor grids. Here we review our recent results on laser diodes (LDs), interband-cascade lasers (ICLs) and quantum-cascade lasers (QCLs), all grown on on-axis (001) Si substrates and covering emission wavelengths from 2 to 10 µm. In addition, we will demonstrate that etching facets is a viable route toward cavity definition either on plain wafers or recessed Si wafers.

Published
2021

2. Long wavelength (λ = 10 - 20 µm) mid-IR quantum cascade lasers for spectroscopy applications

Author

Alexei N. Baranov, Hadrien Philip, Zeineb Loghmari, Michael Bahriz, and Roland Teissier

Subjects
Range (particle radiation), Materials science, Thermoelectric cooling, business.industry, Grating, Laser, law.invention, Wavelength, Cascade, law, Optoelectronics, business, Spectroscopy, Quantum
Abstract

We report new developments of quantum cascade lasers (QCL), made of InAs/AlSb, operating in the long wavelength mid-infrared range from 10 to 20 µm. Fabry-Perot lasers operated in the CW regime up to a wavelength of 18 µm at 40°C, and up to 21 µm on Peltier cooler, with threshold current densities below 1 kA/cm². Distributed feedback QCL are also fabricated using a metal grating on the top of the laser ridges. They demonstrated single frequency operation in CW regime at room temperature. These lasers are suitable for new high resolution spectroscopy applications in this almost unexplored spectral range.

Published
2021

3. Study of resonant transport in InAs-based quantum hot electron transistors

Author

Roland Teissier, Alexei N. Baranov, M. Zaknoune, H. Nguyen Van, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The authors thank the support of French Agence Nationale de la Recherche under the program TACHUS2 (Grant No. ANR-08-BLANC-0299), and ANR-08-BLAN-0299,TACHUS2,Transistors à électrons chauds ultra-rapide à base d'InAs(2008)

Subjects
Materials science, General Physics and Astronomy, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, 7. Clean energy, law.invention, Computer Science::Hardware Architecture, [SPI]Engineering Sciences [physics], Computer Science::Emerging Technologies, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Breakdown voltage, Quantum, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, Common emitter, 010302 applied physics, business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Hot electron transistors, lcsh:QC1-999, Optoelectronics, Physics::Accelerator Physics, Current (fluid), 0210 nano-technology, business, lcsh:Physics
Abstract

A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors.

Published
2020

4. Strong optical coupling between semiconductor microdisk lasers: From whispering gallery modes to collective modes

Author

Alexei N. Baranov, Mikhail Roiz, Roland Teissier, A. M. Monakhov, E.V. Kunitsyna, Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), University of Helsinki, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Department of Chemistry

Subjects
116 Chemical sciences, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, Optical coupling, law.invention, RESONATORS, law, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, Coupling, [PHYS]Physics [physics], business.industry, Single-mode optical fiber, Mode (statistics), Resonance, 021001 nanoscience & nanotechnology, Laser, Semiconductor, Optoelectronics, Whispering-gallery wave, 0210 nano-technology, business
Abstract

In the present paper, we investigate a special type of optical coupling between two electrically pumped semiconductor whispering gallery mode lasers. We fabricate microdisk lasers with a conjunction between the laser cavities, making the coupling stronger. Our experimental results combined with numerical calculations demonstrate a variety of mode families that exist in such systems. Furthermore, we confirm the generation of resonance modes that exist only under simultaneous pumping conditions. These modes are attributed to the collective mode family, which can lead to a single mode operation.

Published
2020

5. InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Author

Roland Teissier, Laurent Cerutti, A. Meguekam, Michael Bahriz, Jean-Baptiste Rodriguez, Alexei N. Baranov, M. Rio-Calvo, Eric Tournié, Zeineb Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Materials science, Threshold current, Silicon, Computer Networks and Communications, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 7. Clean energy, law.invention, 010309 optics, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, business.industry, lcsh:TA1501-1820, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, 0210 nano-technology, business
Abstract

International audience; We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92-0.95 kA/cm 2 at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm 2 and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.

Published
2020
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6. InAs‐based quantum cascade lasers emitting close to 25 µm

Author

A. Meguekam, Roland Teissier, Alexei N. Baranov, Michael Bahriz, Z. Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Threshold current, Physics::Instrumentation and Detectors, Physics::Optics, 02 engineering and technology, law.invention, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, chemistry.chemical_compound, law, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Quantum, ComputingMilieux_MISCELLANEOUS, business.industry, 020208 electrical & electronic engineering, Laser, Cladding (fiber optics), chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Pulsed mode, Indium arsenide, business, Current density
Abstract

Indium arsenide (InAs)-based quantum cascade lasers (QCLs) operating close to 25 µm are reported. Thick n-doped InAs cladding layers were used for optical confinement. Fabry–Perot lasers exhibited a threshold current density as low as 1.1 kA/cm2 in pulsed mode at 80 K. The lasers operated in this regime up to 240 K, where the threshold current density increased up to 1.7 kA/cm2. These are the lowest threshold current densities for QCLs operating above 20 µm.

Published
2019

7. Long wavelength (λ = 10 - 18 μm) mid-IR quantum cascade lasers operating in a continuous wave at room temperature

Author

F. Barho, Hadrien Philip, Michael Bahriz, Z. Loghmari, Roland Teissier, and Alexei N. Baranov

Subjects
Range (particle radiation), Materials science, business.industry, Terahertz radiation, Physics::Optics, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, 010309 optics, Long wavelength, Wavelength, Cascade, law, 0103 physical sciences, Continuous wave, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

We report a study of quantum cascade lasers (QCL), made of InAs and AlSb, operating in the long wavelength mid-infrared range. Lasers based on a design with slightly diagonal intersubband transitions demonstrated improved performances as compared to the previously reported devices employing a vertical scheme. The fabricated lasers operated in the CW regime at 40°C up to a wavelength of 18 μm.

Published
2019

8. Low-pump irradiance to modulate THz waves driven by photo-generated carriers in an InAs slab

Author

Alexei N. Baranov, R. Smaali, Thierry Taliercio, Philippe Nouvel, E. Alvear-Cabezon, F. Gonzalez-Posada, Stéphane Blin, Emmanuel Centeno, and Roland Teissier

Subjects
Permittivity, 0303 health sciences, Electromagnetics, Materials science, business.industry, Terahertz radiation, Ambipolar diffusion, 02 engineering and technology, Rate equation, 021001 nanoscience & nanotechnology, Optical pumping, 03 medical and health sciences, Modulation, Continuous wave, Optoelectronics, 0210 nano-technology, business, 030304 developmental biology
Abstract

We theoretically and experimentally study the THz electromagnetic properties of an undoped-InAs slab whose permittivity is optically modified by a photo-generation process. The modulation of the permittivity is calculated by solving the ambipolar rate equation for the free carriers. Experiment results demonstrate that InAs is a promising semiconductor to manufacture fast and efficiently on-chip THz components. We show a high modulation of the THz transmission up to 100% from 0.75 to 1.1THz at very low pump fluence in the continuous wave regime. We also demonstrate a high-speed transmission modulation rate up to the MHz range with a modulated pump.

Published
2019

9. Terahertz quantum cascade laser with non-resonant extraction

Author

Zeineb Loghmari, Alexei N. Baranov, Michael Bahriz, H. Nguyen-Van, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Terahertz radiation, Phonon, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Gallium arsenide, chemistry.chemical_compound, Operating temperature, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Laser, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, lcsh:QC1-999, chemistry, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Waveguide, lcsh:Physics
Abstract

In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.In order to improve the maximum operating temperature of THz quantum cascade lasers (QCLs) we propose to modify the three well resonant phonon design by increasing the energy of the separation between the bottom transition levels and the ground states, which is usually adjusted to the LO-phonon energy in GaAs. The fabricated devices based on this design with non-resonant depopulation of the bottom transition level operated in pulsed mode up to 190K, which is the best-reported performance for THz QCLs with Al0.15Ga0.85As barriers based on an Au-Au double-metal waveguide. The performed analysis showed that the achieved improvement could be explained by the proposed design modification.

Published
2019

10. Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)

Author

Alexei N. Baranov, Philippe Christol, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Laurent Cerutti, Jean-Philippe Perez, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, media_common.quotation_subject, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Presentation, 0103 physical sciences, Antimonide, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy, media_common
Abstract

International audience

Published
2019

11. Observation of the increase in turn-on delay of quantum cascade lasers under pulsed electrical pumping with finite rise time

Author

D. A. Mikhailov, Nikita A. Pikhtin, E. D. Cherotchenko, Grigorii S. Sokolovskii, Alexei N. Baranov, Innokenty I. Novikov, D. V. Denisov, D. A. Veselov, A. G. Gladyshev, Sergey O. Slipchenko, S. N. Losev, A. V. Babichev, A. Yu. Egorov, E. A. Kognovitskaya, V. I. Kuchinskii, A. V. Lutetskiy, L. Ya. Karachinsky, Roland Teissier, and Vladislav V. Dudelev

Subjects
History, Materials science, business.industry, Laser, Computer Science Applications, Education, law.invention, law, Cascade, Rise time, Turn (geometry), Optoelectronics, business, Quantum
Abstract

We demonstrate the experimental measurements of the turn-on delay in InAs-and InP-based quantum cascade lasers operating under pulsed electrical pumping with non-zero rise time. We report the unexpected delay time dependence on the pumping current density, that does not agree with available theoretical predictions. Performed numerical simulation of the model based on rate equations is only in qualitative, but not quantitative, agreement with our observations.

Published
2020

12. Epsilon near-zero all-optical terahertz modulator

Author

Alexei N. Baranov, E. Alvear-Cabezon, Emmanuel Centeno, Stéphane Blin, R. Smaali, Roland Teissier, Thierry Taliercio, F. Gonzalez-Posada, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Clermont Auvergne [2017-2020] (UCA [2017-2020]), Institut Pascal (IP), and SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Terahertz radiation, business.industry, Attenuation, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Amplitude modulation, Semiconductor, Transmission (telecommunications), Modulation, law, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Irradiation, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; We propose an efficient optically actuated THz modulator based on an ultrathin epsilon-near-zero (ENZ) slab photogenerated in an InAs semiconductor. We experimentally demonstrate a modulation depth of 90% at 1 THz obtained with a continuous laser at irradiation lower than 10 W cm À2. Beyond the strong attenuation of the THz transmission provided by the ENZ absorption effect, we also report a broadband modulation of the THz waves from 1 to 10 THz. In addition, our experimental results show that the cutoff frequency of 3 dB attains 2 MHz in the dynamic modulation regime.

Published
2020

13. Room temperature continuous wave operation of InAs/AlSb-based quantum cascade laser at λ ∼11 µm

Author

H. Nguyen Van, Michael Bahriz, Andrey N. Baranov, A. Meguekam, D. Díaz Thomas, Roland Teissier, Zeineb Loghmari, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 7. Clean energy, 01 natural sciences, law.invention, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], Cascade, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, Wafer, Electrical and Electronic Engineering, 0210 nano-technology, Quantum cascade laser, business, Current density, Quantum, ComputingMilieux_MISCELLANEOUS
Abstract

The InAs/AlSb quantum cascade lasers (QCLs) operating ∼11 µm in the continuous wave (cw) regime at room temperature are reported. The lasers with cleaved Fabry–Perot resonators demonstrated pulsed threshold current densities below 1 kA/cm2 at 300 K and operated in a cw up to 320 K that is the maximum temperature of such regime of operation for InAs-based QCLs. Distributed feedback lasers fabricated from the same wafer exhibited single frequency emission near 11 µm and operated in the cw regime up to 295 K.

Published
2018

14. Intersubband polaritons at λ ∼ 2 μ m in the InAs/AlSb system

Author

L. Le Gratiet, Raffaele Colombelli, Jean-Michel Manceau, Adel Bousseksou, T. Laurent, Roland Teissier, Alexei N. Baranov, Pierre Laffaille, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, [PHYS]Physics [physics], Physics and Astronomy (miscellaneous), business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 0103 physical sciences, Polariton, Optoelectronics, 010306 general physics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

15. Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si

Author

Alexei N. Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez, Roland Teissier, Eric Tournié, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-11-EQPX-0016,EXTRA,Centre d'Excellence sur les Antimoniures(2011), ANR-12-BS03-0002,OPTOSI,Intégration par épitaxie de composants optoélectroniques III-V sur Si(2012), and ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Nucleation, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Semiconductor laser theory, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Antimonide, Optoelectronics, Continuous wave, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We review the recent achievements in the epitaxial integration of III-Sb-based semiconductor lasers on Si substrates. Much work has been done on substrate preparation and III-Sb on Si nucleation, which allowed demonstrating GaInAsSb/AlGaAsSb quantum-well laser diodes operating in continuous wave above room temperature in the 1.5–2.3 μm range and InAs/AlSb quantum cascade lasers emitting near 11 μm operating up to 400 K. Although work remains to be done, in particular toward crystal defect density reduction, the wide wavelength range at reach with the III-Sb technology opens the way to the development of a large portfolio of mid-IR sensing systems.

Published
2018

16. Spatial mode structure in a half-disk cavity laser

Author

Alexei N. Baranov, Mikhail S. Dunaevskiy, A. M. Monakhov, Roland Teissier, Vladislav V. Dudelev, Grigorii S. Sokolovskii, and Prokhor A. Alekseev

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, Laser pumping, Injection seeder, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Optics, law, Quantum dot laser, 0103 physical sciences, Optoelectronics, Laser power scaling, Whispering-gallery wave, 0210 nano-technology, business, Quantum well, Tunable laser
Abstract

We experimentally and theoretically examined the mode structure of half-disk lasers fabricated by cleaving whispering gallery mode (WGM)-disk lasers. The WGM lasers with a radii R of 50–150 μm emitting near 2.2 μm were fabricated using the GaSb-based quantum well structure [1]. The cleavage usually passes not through the centre of the disk with the deviation δ/R up to 20 % (Fig. 1a). Recently we have demonstrated that in the half-disk lasers the output beam is formed by optical modes located at a distance of 5–20 μm from the disk periphery [2], whereas in the full disk the light propagates along the disk wall, much closer to its edges.

Published
2017

17. Continuous wave operation of InAs-based quantum cascade lasers at 20 μm

Author

Alexei N. Baranov, A. Meguekam, H. Nguyen Van, Roland Teissier, Z. Loghmari, Michael Bahriz, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Threshold current, Physics and Astronomy (miscellaneous), business.industry, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, Cladding (fiber optics), 7. Clean energy, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Cascade, law, Optical cavity, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Pulsed mode, Continuous wave, Optoelectronics, 0210 nano-technology, business, Quantum
Abstract

International audience; We report low threshold continuous wave (CW) operation of InAs/AlSb quantum cascade lasers emitting around 20 lm. The laser cavity was made of a plasmon-enhanced dielectric waveguide with cladding layers made of n-InAs. The devices exhibited a threshold current density of 1.38 kA/cm 2 at the maximum temperature of CW operation of 240 K and an output power of 14 mW/facet at T ¼ 80 K. In pulsed mode, the lasers operated up to 380 K with a threshold current density of 1.15 kA/cm 2 at room temperature.

Published
2019

18. Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

Author

Alexei N. Baranov, Michael Bahriz, Zeineb Loghmari, Hadrien Philip, Hoang Nguyen Van, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Materials science, Physics::Optics, quantum cascade laser, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, 010309 optics, law, 0103 physical sciences, Radiology, Nuclear Medicine and imaging, Instrumentation, Quantum, long wavelength infrared, business.industry, Single-mode optical fiber, lcsh:TA1501-1820, distributed feedback, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Wavelength, Cascade, molecular spectroscopy, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, Optoelectronics, 0210 nano-technology, Quantum cascade laser, business
Abstract

International audience; The extension of the available spectral range covered by quantum cascade lasers (QCL) would allow one to address new molecular spectroscopy applications, in particular in the long wavelength domain of the mid-infrared. We report in this paper the realization of distributed feedback (DFB) QCLs, made of InAs and AlSb, that demonstrated a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm, with output powers in the mW range. This is the longest wavelength for DFB QCLs, and for any QCLs or semiconductor lasers in general, operating in a CW at room temperature.

Published
2019

19. Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 micron

Author

Alexei N. Baranov, Michael Bahriz, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Semiconductor laser theory, law.invention, 010309 optics, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], Optics, Far infrared, law, 0103 physical sciences, Quantum well, business.industry, Doping, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Magnetic field, Cascade, Optoelectronics, Continuous wave, 0210 nano-technology, business
Abstract

International audience; We report low threshold InAs/AlSb quantum cascade lasers emitting near 15 micron. The devices are based on a vertical design similar to those employed previously in far infrared InAs-based QCLs, whereas the doping level of the active core is considerably decreased. The lasers exhibit a threshold current density as low as 730 A/cm(2) in pulsed mode at room temperature and can operate in this regime up to 410K. The continuous wave regime of operation has been achieved in these devices at temperatures up to 20 degrees C. The cw regime is demonstrated for InAs-based QCLs for the first time at room temperature.

Published
2016

20. Apertureless SPM method of light detection

Author

A. Dontsov, Philippe Girard, Prokhor A. Alekseev, Alexei N. Baranov, Roland Teissier, A. M. Monakhov, Richard Arinero, Mikhail S. Dunaevskiy, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Microscope, Infrared, Astrophysics::Cosmology and Extragalactic Astrophysics, 02 engineering and technology, 01 natural sciences, Electromagnetic radiation, law.invention, Scanning probe microscopy, Optics, law, 0103 physical sciences, Mechanical resonance, Astrophysics::Galaxy Astrophysics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Resonance, 021001 nanoscience & nanotechnology, Laser, Optoelectronics, Astrophysics::Earth and Planetary Astrophysics, 0210 nano-technology, business, Lasing threshold
Abstract

We demonstrate the effect of infrared (IR) illumination on mechanical resonance frequency of scanning probe microscope (SPM) probe. The analytical estimations permit to relate the observed effect with the SPM-probe heating by IR-radiation. This effect can be used for the SPM mapping of IR-radiation spatial distribution on the emitting surfaces. The proposed method demonstrates high sensitivity to the infrared radiation and lateral resolution in the sub-micron range. It was applied to visualize complex spatial structure of lasing modes on the mirror of whispering-gallery mode GaSb/GaAlAsSb/GaInAsSb laser.

Published
2016

21. Quantum Cascade Lasers in the InAs/AlSb Material System

Author

Alexei N. Baranov, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, Laser, 7. Clean energy, Atomic and Molecular Physics, and Optics, Band offset, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, Wavelength, [SPI]Engineering Sciences [physics], Optics, Effective mass (solid-state physics), Semiconductor, law, Cascade, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Quantum cascade laser, Photonic crystal
Abstract

International audience; We review the current state of the InAs/AlSb quantum cascade laser (QCL) technology. These materials have brought significant progress in short wavelength QCL due to the high-conduction band offset. The first QCLs emitting below 3 mu m have been demonstrated in this system. The short wavelength limit of QCL operation has further been moved down to 2.6 mu m. This system is also well suited for far-infrared QCLs because high intersubband gain can be achieved at low transition energies due to the small electron effective mass in InAs. Room temperature operation has been demonstrated in InAs-based QCLs to a wavelength of 21 mu m, for the first time for any semiconductor laser emitting above 16 mu m. Both short-and long-wavelength single-frequency distributed feedback InAs/AlSb QCLs have been realized, as well as widely tunable external cavity sources for the 3-3.5 mu m spectral range.

Published
2015

22. Ray interference in tunable whispering gallery mode semiconductor laser

Author

Yu. P. Yakovlev, V. V. Sherstnev, Andrey N. Baranov, A. I. Dershevich, Guilhem Boissier, A. N. Imenkov, and Roland Teissier

Subjects
Physics, Physics and Astronomy (miscellaneous), business.industry, Near and far field, Directivity pattern, Radiation, Laser, law.invention, Optics, Semiconductor, Interference (communication), law, Optoelectronics, Whispering-gallery wave, business, Diode
Abstract

We have observed the interference of rays in a whispering gallery mode (WGM) semiconductor diode laser with a half-disk cavity. The interference leads to the formation of about 20 lobes in the radiation directivity pattern in the far field zone. Each of these lobes consists of even narrower components. It is established that the number of narrow lobes is determined by the coherent counterphase rays originating from peripheral points of the half-disk cavity mirror. The wide lobes are related to adjacent coherent radiation sources, the presence of which is confirmed by the near field pattern.

Published
2009

23. Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature

Author

A. P. Astakhova, Andrey N. Baranov, A. M. Monakhov, M. A. Sipovskaya, Guilhem Boissier, K. V. Kalinina, A. N. Imenkov, V. V. Sherstnev, E. A. Grebenshchikova, Roland Teissier, Yu. P. Yakovlev, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Laser, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, 010309 optics, Wavelength, Semiconductor, Optics, law, 0103 physical sciences, Optoelectronics, Whispering-gallery wave, Current (fluid), business, ComputingMilieux_MISCELLANEOUS
Abstract

Frequency tuning in a whispering gallery mode (WGM) semiconductor laser (λ = 2.35 µm) with a sector (half-disk) cavity has been studied. Pumping by current pulses with a duration of up to 1.2 µs is accompanied by smooth tuning of the main WGM toward longer wavelengths by 30 A at room temperature, which is 1.4 times the intermode distance.

Published
2009

24. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μ m

Author

Roland Teissier, Alexei N. Baranov, Guy Aubin, A. M. Monakhov, A. Ramdane, Kamel Merghem, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), and Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Physics and Astronomy (miscellaneous), business.industry, Saturable absorption, Laser, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Resonator, Laser linewidth, Optics, Mode-locking, law, Optical cavity, Optoelectronics, business, Quantum well, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

Published
2015

25. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

Author

César Magén, Alexei N. Baranov, Julien Nicolai, Christophe Gatel, Bénédicte Warot-Fonrose, Roland Teissier, Anne Ponchet, Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), University of Zaragoza - Universidad de Zaragoza [Zaragoza], ANR-11-BS10-0017,NAIADE,Nanocaractérisation et modélisation d'Antimoniures d'éléments III : Interfaces et Analyse des Déformations d'Epitaxie(2011), European Project: 312483, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, business.industry, Resolution (electron density), Analytical chemistry, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, PACS numbers: 68.60.Bs , 68.37.Lp , 68.35.Ct , 68.65.Fg, Annular dark-field imaging, Transmission electron microscopy, law, 0103 physical sciences, Microscopy, Optoelectronics, numbers: 6860Bs, Thermal stability, Electron microscope, 0210 nano-technology, business, PACS: 68.60.Bs , 68.37.Lp , 68.35.Ct , 68.65.Fg, Molecular beam epitaxy
Abstract

International audience; Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by High Angle Annular Dark Field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

Published
2015

26. Apertureless scanning microscope probe as a detector of semiconductor laser emission

Author

Alexander Titkov, Paul Girard, Richard Arinero, Anton Dontsov, Mikhail S. Dunaevskiy, Roland Teissier, Alexei N. Baranov, Prokhor A. Alekseev, Andrei Monakhov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Médialab (Sciences Po) (Médialab), and Sciences Po (Sciences Po)

Subjects
010302 applied physics, Scanning Hall probe microscope, Distributed feedback laser, Physics and Astronomy (miscellaneous), Chemistry, business.industry, Far-infrared laser, Physics::Optics, Near and far field, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Semiconductor laser theory, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Scanning probe microscopy, Optics, law, 0103 physical sciences, Microscopy, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.

Published
2015

27. High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide

Author

Alexei N. Baranov, Michael Bahriz, Roland Teissier, G. Lollia, ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, Doping, Physics::Optics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Laser, Cladding (fiber optics), 7. Clean energy, Atomic and Molecular Physics, and Optics, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Condensed Matter::Materials Science, Wavelength, Optics, Far infrared, law, Cascade, Optoelectronics, Free carrier absorption, business, ComputingMilieux_MISCELLANEOUS, Quantum well
Abstract

We demonstrate the high temperature operation, up to 80°C, of quantum cascade lasers emitting at a wavelength of 20 µm. The lasers are based on the InAs/AlSb materials and take benefit of a low loss plasmon-enhanced dielectric waveguide. The waveguide consists of doped InAs cladding layers and low-doped InAs spacers. For 2.9-mm-long devices, the threshold current density is 4.3 kA/cmsup2/supand the measured peak output power is 7 mW at room temperature. The cavity length dependence of the threshold currents also indicates that very large optical gain is achieved and effectively overcome the strong free carrier absorption.

Published
2015

28. Long-infrared InAs-based quantum cascade lasers

Author

Michael Bahriz, Raffaele Colombelli, Adel Bousseksou, Roland Teissier, Alexei N. Baranov, D. Chastanet, and G. Lollia

Subjects
Materials science, business.industry, Laser, law.invention, Semiconductor laser theory, chemistry.chemical_compound, Optics, Effective mass (solid-state physics), chemistry, Quantum dot laser, law, Optoelectronics, business, Quantum cascade laser, Quantum well, Indium gallium arsenide, Tunable laser
Abstract

Since the first demonstration of the quantum cascade laser (QCL) in 1994, three main material families have been used. Each of these three materials best suits a specific wavelength range, due to differences in electronic effective mass, conduction band offset and index of refraction. The material of choice for mid-infrared (mid-IR) applications is InGaAs/AlInAs, with excellent performances demonstrated from λ=3.5 μm to λ=10 μm and beyond. The GaAs/AlGaAs system is the preferred material for THz applications (65 μm max ) of almost 200K have been achieved. Finally, InAs-based QCLs were originally developed for short infrared wavelengths (λ ∼ 2.6–3.5 μm)1, benefiting of the large conduction band-offset. Another advantage of the InAs/AlSb system is the low electronic effective mass in the InAs quantum wells (0.023 m 0 , where m 0 is the electron mass), which provides elevated optical gain2.

Published
2015

29. InAs/AlSb quantum cascade lasers operating near 20 µm

Author

Alexei N. Baranov, G. Lollia, Roland Teissier, Michael Bahriz, P. Laffaille, ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Waveguide (electromagnetism), Threshold current, Materials science, business.industry, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, Cascade, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Pulsed mode, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Current density, Quantum, ComputingMilieux_MISCELLANEOUS
Abstract

InAs-based quantum cascade lasers (QCLs) operating near 20 µm are demonstrated. A double metal waveguide fabricated by transfer of the laser active region onto a host InAs substrate has been employed in these devices. The threshold current density of 1.6 kA/cm2 at 80 K is lower than that of InP-based QCLs emitting in the same spectral region. The lasers operated in pulsed mode up to 170 K.

Published
2013

30. Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors

Author

Mohammed Zaknoune, Roland Teissier, J. C. Moreno, A. N. Baranov, H. van Nguyen, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Fabrication, Materials science, business.industry, Superlattice, Transistor, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Temperature measurement, Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Parasitic element, Optoelectronics, Radio frequency, Electrical and Electronic Engineering, 0210 nano-technology, business, Common emitter
Abstract

The fabrication process of a hot-electron unipolar transistor with vertical transport based on InAs material is reported. Devices with an emitter width of 0.3 μm are fabricated and characterized. This submicrometer geometry allowed suppressing parasitic resistances and achieving high-current densities required for high-frequency operation. For the first time, for a hot-electron transistor, RF performances were achieved at room temperature. Cutoff frequencies of ft = 75 GHz and fmax = 88 GHz were obtained on devices transferred on an insulating substrate.

Published
2012

31. High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers

Author

Raffaele Colombelli, François H. Julien, Adel Bousseksou, Roland Teissier, Alexei N. Baranov, G. Lollia, Michael Bahriz, D. Chastanet, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), Laboratoire Ecologie Fonctionnelle et Environnement (ECOLAB), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut Ecologie et Environnement (INEE), Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Infrared, Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, 010309 optics, Optics, Fiber Bragg grating, law, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, business.industry, Single-mode optical fiber, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Cascade, Optoelectronics, 0210 nano-technology, business, Current density
Abstract

We demonstrate quantum cascade lasers in the InAs/AlSb material system which operate up to 333 K (in pulsed regime) at λ = 17.8 μm. They employ metal-metal optical waveguides and the threshold current density is 1.6 kA/cm2 at 78 K. We also report distributed-feedback devices obtained using the same laser material via a 1st-order Bragg grating inscribed in the sole top metallic contact. Spectral single mode operation with more than 20 dB side mode suppression ratio is achieved at a temperature of 300 K. Large wavelength tuning rates, of the order of 1.5 nm/K, are demonstrated. A wavelength coverage of 0.38 μm is achieved in single-mode regime over a temperature range of 255 K.

Published
2014

32. New scanning probe microscopy near-field imaging method for laser radiation intensity mapping

Author

Mikhail S. Dunaevskiy, Paul Girard, Alexei N. Baranov, A. N. Titkov, A. M. Monahov, Roland Teissier, and Prokhor A. Alekseev

Subjects
Distributed feedback laser, Materials science, business.industry, Far-infrared laser, Physics::Optics, Near and far field, Scanning capacitance microscopy, Laser, law.invention, X-ray laser, Scanning probe microscopy, Optics, law, Optoelectronics, business, Vibrational analysis with scanning probe microscopy
Abstract

Novel scanning probe microscopy method of near field imaging of laser radiation is proposed. The method providing a submicron spatial resolution is based on detection of a shift of the probe resonance related to its heating by absorbed radiation. The method has been realized with a conventional silicon probe and has been employed for visualization of infrared emission from a half-disk semiconductor whispering gallery mode laser. Keywords— scanning probe microscopy; near field; laser radiation

Published
2014

33. Distributed-feedback GaSb-based laser diodes in the 2.3 to 3.3μm wavelength range

Author

Olivier Gauthier-Lafaye, Alexandre Larrue, Tong Nguyen-Ba, Roland Teissier, Aurore Vicet, Yves Rouillard, Laurent Cerutti, Quentin Gaimard, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
[PHYS]Physics [physics], Distributed feedback laser, Materials science, business.industry, 020208 electrical & electronic engineering, 02 engineering and technology, Grating, 021001 nanoscience & nanotechnology, Laser, 7. Clean energy, law.invention, Semiconductor laser theory, [SPI.TRON]Engineering Sciences [physics]/Electronics, Optics, Fiber Bragg grating, 13. Climate action, law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Dry etching, 0210 nano-technology, business, Lasing threshold, Molecular beam epitaxy
Abstract

International audience; Development of a reliable, selective, sensitive, technique for atmospheric trace gas concentrations monitoring is a critical challenge in science and engineering. Tunable single-frequency laser in the 2.3 to 3.3µm wavelength range, working in a continuous regime at room temperature can be used for absorption spectroscopy to identify and quantify several gases such as methane (greenhouse gases) and ethylene (food-processing) which are studied in the IES. We report here on the design and fabrication of 1st to 4th order distributed-feedback (DFB) antimonide-lasers diodes in the 2.3 to 3.3µm wavelength range. This process is applied to all studied structures grown by molecular beam epitaxy (MBE) on GaSb substrate. Electromagnetic modeling helps us to determine the Bragg grating period as well as the global geometry of the structure in order to optimize both modal discrimination and optical power of the lasing mode. The grating is defined by holographic lithography. Two DFB laser diode designs are proposed and investigated in parallel: -Side wall corrugation DFB: A corrugation on the lateral sides of the ridge waveguide is transferred by both wet and dry on a hard mask followed by a Cl2/N2 dry etching in the III-V heterostructure. -Buried DFB: The MBE growth is stopped at the top of the active region. Then the Bragg grating is etched by Ar sputtering . A MBE regrowth process is performed allowing the growth of the upper cladding layer. Next chemical etching of the mesa is done with fluoro-chromic acid. Si3N4 isolation and evaporation of ohmic contacts ends those processes. Finally we will show the results on the fabrication and characterization of the devices. This work is supported by the ANR NexCILAS international project, ANR MIDAS project, NUMEV labex and RENATECH national Network.

Published
2014

34. Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

Author

Gilles Patriarche, J Ramos, G. Le Roux, Roland Teissier, Guillaume Saint-Girons, Ludovic Largeau, E.V.K Rao, Jean-Christophe Harmand, G Ungaro, Max-Planck-Institut für Astronomie (MPIA), Max-Planck-Gesellschaft, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Ecologie Fonctionnelle et Environnement (ECOLAB), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut Ecologie et Environnement (INEE), Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Photoluminescence, Annealing (metallurgy), Alloy, Mineralogy, 02 engineering and technology, engineering.material, Epitaxy, 01 natural sciences, Semiconductor laser theory, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Thin film, ComputingMilieux_MISCELLANEOUS, Quantum well, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], engineering, Optoelectronics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract

We investigated the molecular-beam epitaxy and the properties of GaAsSbN compound with a low N content in quantum well structures on GaAs. This alloy appears to be an interesting alternative for GaAs-based devices emitting in the 1.3–1.55mm wavelength range. Favorable comparison with the GaInAsN alloy is presented in terms of emission at longer wavelengths. Photoluminescence and annealing studies of GaAsSbN showed characteristics comparable to those already reported for GaInAsN. Carrier recombinations are dominated by extrinsic transitions in as-grown samples. Thermal anneal drastically improves the photoluminescence properties. # 2001 Elsevier Science B.V. All rights reserved.

Published
2001

35. Visual observation of frequency tuning in whispering gallery mode diode laser at room temperature

Author

E. A. Grebenshchikova, Yu. P. Yakovlev, A. N. Imenkov, Andrey N. Baranov, Roland Teissier, V. V. Sherstnev, M. A. Sipovskaya, Guilhem Boissier, and A. M. Monakhov

Subjects
Materials science, Physics and Astronomy (miscellaneous), business.industry, Direct observation, Radiation, Laser, law.invention, Current pulse, Wavelength, Optics, law, Optoelectronics, Visual observation, Whispering-gallery wave, business, Diode
Abstract

We report on the direct observation of an increase in the wavelength of output radiation during the pumping current pulse in a whispering gallery mode (WGM) semiconductor diode laser (2.35 μm) with a sector (half-disk) cavity. During the current pulse with a duration of up to 1.5 μs, the main WGM wavelength smoothly increases by 30 A at room temperature.

Published
2009

36. Infrared whispering-gallery-mode lasers (λ= 2.4 μm) with convex disk cavity operating at room temperature

Author

Roland Teissier, A. P. Astakhova, N. D. Il’inskaya, E. A. Grebenshchikova, Guilhem Boissier, V. V. Sherstnev, A. M. Monakhov, Yu. P. Yakovlev, Andrey N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Range (particle radiation), Materials science, Physics and Astronomy (miscellaneous), Infrared, business.industry, Regular polygon, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Optics, Semiconductor, law, Etching (microfabrication), 0103 physical sciences, Optoelectronics, Emission spectrum, Whispering-gallery wave, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

A whispering gallery mode (WGM) semiconductor laser with a convex disk cavity operating at room temperature in the middle-IR range (λ = 2.4 μm) has been created for the first time. The convex cavity was formed by etching in a specially selected CrO3-HF-H2O mixture. The room-temperature emission spectra have been measured. The laser generates WGMs at room temperature in a pulsed regime.

Published
2008

37. Observation of whispering gallery modes in lasers with cut disk cavities

Author

V. V. Sherstnev, Roland Teissier, Guilhem Boissier, Andrey N. Baranov, A. P. Astakhova, Yu. P. Yakovlev, A. M. Monakhov, E. A. Grebenshchikova, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), business.industry, Wavelength range, 020208 electrical & electronic engineering, 02 engineering and technology, Radiation, 021001 nanoscience & nanotechnology, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Optics, law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Whispering-gallery wave, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

Whispering gallery modes (WGMs) have been observed in lasers with cut disk (half-and quarterdisk) cavities operating at room temperature in the 2.0–2.4 μm wavelength range. The possibility of WGM generation in a disk-sector cavity is theoretically studied. It is established that the intermode distance in a full-and half-disk cavity is the same, while that in the quarter-disk cavity is doubled. A new method for the radiation extraction from WGM lasers is proposed.

Published
2008

38. Optical Spectroscopy and Transport Studies of Tunnelling Processes and Hot Electron Relaxation in GaAs–AlGaAs and GaAs–AlAs Single Barrier Heterostructures

Author

Roland Teissier, R. Grey, John W. Cockburn, M. S. Skolnick, G. Hill, R. Planel, Jean-Luc Pelouard, Jonathan J. Finley, and N. A. Pate

Subjects
business.industry, Chemistry, Relaxation (NMR), Heterojunction, Gaas alas, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Optoelectronics, business, Spectroscopy, Gaas algaas, Transport studies, Hot electron, Quantum tunnelling
Published
1997

39. Measurement of Electron Ballistic Length in p-Doped InGaAs

Author

F. Mollot, Roland Teissier, and Jean-Luc Pelouard

Subjects
Materials science, business.industry, Mean free path, Doping, Measure (physics), Optoelectronics, Electron, Electroluminescence, Condensed Matter Physics, business, Hot electron, Layer thickness, Electronic, Optical and Magnetic Materials
Abstract

The electroluminescence of InP/AlAs/InGaAs n–p heterodiodes is carefully analyzed as a function of temperature, p-doping level and InGaAs layer thickness. It provides an original method to measure hot electron mean free path in p-type InGaAs. Furthermore, this measurement can be performed for various p-doping levels, ballistic electron energies or temperatures.

Published
1997

40. Fabrication of quartz microcylinders by laser interference lithography for angular optical tweezers

Author

Benoit Charlot, Zhanna Santybayeva, Frederic Pichot, Afaf Meghit, Charles de Marin, Francesco Pedaci, Rudy Desgarceaux, Roland Teissier, Centre de Biochimie Structurale [Montpellier] (CBS), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Institut National de la Santé et de la Recherche Médicale (INSERM), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Matériaux, MicroCapteurs et Acoustique (M2A), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Composants à Nanostructure pour le moyen infrarouge (NANOMIR)

Subjects
0301 basic medicine, Materials science, Torque wrench, Physics::Optics, 02 engineering and technology, law.invention, [SPI]Engineering Sciences [physics], 03 medical and health sciences, Optics, law, Torque, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Lithography, ComputingMilieux_MISCELLANEOUS, Birefringence, business.industry, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Polarization (waves), Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, 030104 developmental biology, Optical tweezers, Optoelectronics, 0210 nano-technology, business, Electron-beam lithography
Abstract

The use of optical tweezers (OTs) and spin angular momentum transfer to birefringent particles allows new mechanical measurements in systems where torque and rotation are relevant parameters at the single-molecule level. There is a growing interest in developing simple, fast, and inexpensive protocols to produce a large number of submicron scale cylinders of quartz, a positive uniaxial birefringent crystal, to be employed for such angular measurements in OTs. Here, we show that laser interference lithography, a method well known for its simplicity, fulfills these requirements and produces quartz cylindrical particles that we successfully use to apply and measure optical torque in the piconewton nm range in an optical torque wrench.

Published
2016

41. High temperature operation of short wavelength InAs-based quantum cascade lasers

Author

J. C. Moreno, Michael Bahriz, Alexei N. Baranov, Roland Teissier, P. Laffaille, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, General Physics and Astronomy, 02 engineering and technology, engineering.material, 7. Clean energy, 01 natural sciences, law.invention, Optics, Coating, law, 0103 physical sciences, Quantum, Quantum well, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Laser, lcsh:QC1-999, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Reflection (mathematics), Cascade, engineering, Optoelectronics, Pulse mode, 0210 nano-technology, business, lcsh:Physics
Abstract

International audience; InAs/AlSb quantum cascade lasers emitting at 3.06 and 3.22μm at room temperature has been studied. The lasers with high reflection coating on back facets operated in pulse mode up to 400 and 423 K, respectively. The obtained results showedno dramatic performance degradation of the InAs-based QCLs with decreasing emission wave length down to 3μm

Published
2012

42. Highly tunable whispering gallery mode semiconductor lasers with controlled absorber

Author

Roland Teissier, Yu. P. Yakovlev, A. M. Monakhov, Guilhem Boissier, Victor V. Sherstnev, M. I. Larchenkov, Andrey N. Baranov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, 020210 optoelectronics & photonics, Optics, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Quantum well, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Quantum dot laser, Optoelectronics, Whispering-gallery wave, business, Tunable laser
Abstract

Tunable semiconductor lasers with controlled absorber based on GaInAsSb/GaAlAsSb quantum well heterostructure was fabricated and experimentally studied. The emission wavelength of these lasers shifts from 2.24 to 2.28 μm when the bias on the control contact decreases from the voltage equal to that on the main electrode to 0 V when the control contact is grounded. The principle of operation of such a device is given.

Published
2012

43. Sub-micron quantum cascade transistor

Author

Alexei N. Baranov, Mohammed Zaknoune, H. Nguyen Van, J. C. Moreno, Roland Teissier, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Fabrication, Materials science, Terahertz radiation, business.industry, Transistor, Process (computing), 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Cascade, law, 0103 physical sciences, Optoelectronics, High current, 0210 nano-technology, business, Current density, Quantum
Abstract

A sub-micron process for the fabrication of an original unipolar vertical transport transistor is reported. This allowed suppressing parasitic resistances and achieving high current densities required for THz frequency operation.

Published
2011

44. Physical properties of short wavelength 2.6µm InAs/AlSb-based quantum cascade lasers

Author

Alexei N. Baranov, Stephen J. Sweeney, Alf R. Adams, Igor P. Marko, A. Aldukhayel, Stanko Tomić, and Roland Teissier

Subjects
Materials science, genetic structures, business.industry, Hydrostatic pressure, Physics::Optics, Electron, Laser, law.invention, Wavelength, Optics, Quantum dot laser, law, Cascade, Optoelectronics, sense organs, business, Tunable laser, Quantum well
Abstract

We used high hydrostatic pressure techniques to understand the deteriorating temperature performance with decreasing wavelength of short wavelength quantum cascade lasers. Influence of inter-valley scattering and distribution of the electron wave functions will be discussed.

Published
2010

46. Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure

Author

Alexei N. Baranov, Stanko Tomić, Roland Teissier, Alfred R. Adams, Igor P. Marko, Stephen J. Sweeney, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Condensed matter physics, Phonon scattering, Carrier scattering, business.industry, Chemistry, Hydrostatic pressure, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Semiconductor laser theory, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Quantum cascade laser, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract

To investigate carrier scattering processes in short wavelength InAs/AlSb quantum cascade lasers we carried out experimental and theoretical studies of the threshold current, I th , as a function of high hydrostatic pressure and temperature. Using the calculated pressure dependence of the optical phonon scattering current, I ph , and the estimated pressure dependence of leakage current, I leak , we show that carrier leakage from the upper laser levels into the indirect L-valley of the conduction band in InAs quantum wells is negligible in the 3.3 μm QCLs at RT leading to their superior temperature performance. In the shorter wavelength devices emitting at 2.9 μm, this loss mechanism is more important and accounts for up to 13% of I th at 190 K.

Published
2009

47. Experimental observation of whispering gallery modes in sector disk lasers

Author

Andrey N. Baranov, Roland Teissier, A. P. Astakhova, Guilhem Boissier, Victor V. Sherstnev, Yu. P. Yakovlev, A. M. Monakhov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics and Astronomy (miscellaneous), Physics::Optics, 02 engineering and technology, Laser pumping, 01 natural sciences, Semiconductor laser theory, law.invention, Resonator, Optics, law, 0103 physical sciences, Emission spectrum, Astrophysics::Galaxy Astrophysics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, business.industry, 021001 nanoscience & nanotechnology, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, Continuous wave, Optoelectronics, Astrophysics::Earth and Planetary Astrophysics, Whispering-gallery wave, 0210 nano-technology, business, Tunable laser
Abstract

The existence of the whispering gallery modes in a sector disk resonator has been demonstrated theoretically and experimentally observed in a disk, half-disk, and quarter-disk semiconductor lasers. The half-disk and quarter-disk lasers are fabricated from 285μm diameter disks emitted near 2.13μm at room temperature with continuous wave threshold currents of 55–60mA. Mode spacing in emission spectra of the half-disk lasers was the same as for the whole disk and doubled for the quarter disk as expected from the theoretical analysis. Half-disk lasers emit two parallel beams from the cleaved facet, while the two output beams are perpendicular in quarter-disk devices.

Published
2009

48. InAs-based distributed feedback quantum cascade lasers

Author

Alexei N. Baranov, J. Devenson, Roland Teissier, O. Cathabard, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, 7. Clean energy, law.invention, Semiconductor laser theory, [SPI.TRON]Engineering Sciences [physics]/Electronics, Wavelength, Optics, law, Cascade, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Quantum cascade laser, Quantum, Tunable laser, Quantum well, ComputingMilieux_MISCELLANEOUS
Abstract

InAs/AlSb distributed feedback quantum cascade lasers are presented. The lasers can operate in the single frequency regime at 3.34-3.38 mum in the 0-100degC temperature range in pulse mode. The wavelength tuning rate of the lasers is 0.27 nm/K and continuous tuning range up to 10 nm can be achieved.

Published
2009

49. The effect of hydrostatic pressure on the operation of quantum cascade lasers

Author

Alexei N. Baranov, Igor P. Marko, Stephen J. Sweeney, Alfred R. Adams, Stanko Tomić, Roland Teissier, Advanced Technology Institute, University of Surrey (UNIS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Condensed matter physics, business.industry, Chemistry, Carrier scattering, Scattering, Hydrostatic pressure, 01 natural sciences, law.invention, Semiconductor laser theory, [SPI.TRON]Engineering Sciences [physics]/Electronics, 010309 optics, chemistry.chemical_compound, Operating temperature, Cascade, law, 0103 physical sciences, Optoelectronics, Indium arsenide, business, Quantum cascade laser, ComputingMilieux_MISCELLANEOUS
Abstract

Quantum Cascade Lasers (QCLs) have been very successful at long wavelengths, >4μm, and there is now considerable effort to develop QCLs for short wavelength (2-3μm) applications. To optimise both interband and QC lasers it is important to understand the role of radiative and non-radiative processes and their variation with wavelength and temperature. We use high hydrostatic pressure to manipulate the band structure of lasers to identify the dominant efficiency limiting processes. We describe how hydrostatic pressure may also be used to vary the separation between the Γ, Χ and L bands, allowing one to investigate the role of inter-valley carrier scattering on the properties of QCLs. We will describe an example of how pressure can be used to investigate the properties of 2.9-3.3μm InAs/AlSb QCLs. We find that while the threshold current of the 3.3μm devices shows little pressure variation even at room temperature, for the 2.9μm devices the threshold current increases by ~20% over 4kbar at 190K consistent with carrier scattering into the L-minima. Based on our high pressure studies, we conclude that the maximum operating temperature of InAs/AlSb QCLs decreases with decreasing wavelength due to increased carrier scattering into the L-minima of InAs.

Published
2009

50. InAs Quantum Hot Electron Transistor

Author

Roland Teissier, T. Daoud, Alexei N. Baranov, and J. Devenson

Subjects
Transistor design, Materials science, business.industry, Heterojunction bipolar transistor, Transistor, Heterojunction, Very high frequency, Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, law.invention, Condensed Matter::Materials Science, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Quantum, Hot electron, Quantum well, Hardware_LOGICDESIGN
Abstract

We report in this paper the conception and first characterizations of a Quantum Hot Electron Transistor, an innovative transistor design based on the concept of hot electron transistor and made of InAs/AlSb heterostructures, that has the potential to operate at very high frequency.

Published
2008

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