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We report on the free-running and frequency stabilized operation of a ring resonator-tuned full-band tuneable laser. The laser is a monolithically integrated semiconductor ring laser tuneable over 34 nm, from 1522-1556 nm, fabricated using a commercially-available, InP-based, active-passive foundry technology. The mode selection is implemented using the Vernier effect by reverse-biasing voltage-controlled electro-optically tuned ring resonators. The laser exhibits a typical intrinsic linewidth of 110 kHz over the C-band and a side-mode suppression ratio (SMSR) exceeding 50 dB. The linewidth over the tuning range does not significantly vary, showing that the tuning mechanism does not cause linewidth broadening. The power dissipated in the tuning elements is 1.4 mW per ring. Using the same reverse bias voltage-controlled electro-optic tuning, we also demonstrate the locking of the laser to a high-finesse etalon using Poun-Drever-Hall frequency locking. Our implementation requires a single control loop because of the reverse bias tuning. All deployed tuning effects in the phase modulators have the same sign therefore resulting in a flatter frequency dependent phase response compared to current injection feedback. The control loop has a bandwidth of 500 kHz and a control range of 2.9 GHz. We report 1 kHz level linewidth for millisecond observation times for the stabilized laser.

We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.

We present broadband MMI couplers, developed for a novel integration platform on InP with active/passive integration capabilities for the 1300nm wavelength range. Low loss (

We present the frequency stabilization of a monolithically integrated extended cavity single mode InP diode laser using the Pound-Drever-Hall (PDH) frequency locking technique. The laser is a multi-section distributed Bragg reflector (DBR) laser with an intra-cavity ring resonator, fabricated using an InP active-passive integration technology. The laser is locked to a 700 kHz wide resonance of a Fabry-Perot etalon. The single electrical feedback is applied on the reverse biased rear DBR section of the laser, used to tune the lasing mode. This is the first time to our knowledge that the feedback is applied on a reverse biased, voltage controlled section of an integrated laser cavity. In our implementation the tuning is based on electro-optic effects avoiding significant thermal effects in the tuning element. We demonstrate a linewidthreduction down to 5 kHz and frequency noise suppression of about 30 dB at 10 Hz offset frequency. The bandwidth of the control loop is about 500 kHz, limited by the phase delay of components in our loop.

We demonstrate the generation of radio-frequency (RF) signals using stabilized integrated semiconductor lasers. The lasers are monolithically integrated on the same chip using InP active-passive integration technology. They are locked to different resonances of the same external optical cavity using the Pound-Drever-Hall locking technique. The locking is implement with single control loop for each laser and by voltage controlled tuning thus avoiding significant thermal effects. The generated RF signal can be tuned discretely to frequencies that are multiples of the external optical cavity free spectral range. Examples of beat tones at 12.436, 24.8735 and 40.4194 GHz are demonstrated. The linewidth of the generated signals at all frequencies is less than 40 kHz. The single-side-band phase noise is about -54 dBc/Hz for frequencies offsets from the carrier at 12.436 GHz between 1 kHz and 10 kHz and -60 and -67 dBc/Hz at 100 kHz and 1 MHz respectively.

We demonstrate a monolithic extended cavity InP-based single-mode laser with DBR mirrors and an intra-cavity ring resonator with 15 mA threshold current fabricated with a generic integration technology. A 130 kHz linewidth has been measured and an SMSR well over 60dB.

Residual amplitude modulation in integrated electro-optic InP-based phase modulators is measured and its effect in the Pound-Drever-Hall frequency stabilization aimed at 10kHz stability is investigated. Optimum operating conditions are presented.