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Organic electronic circuits based on organic electrochemical transistors (OECTs) are attracting great attention due to their printability, flexibility, and low voltage operation. Inverters are the building blocks of digital logic circuits (e.g., NAND gates) and analog circuits (e.g., amplifiers). However, utilizing OECTs in electronic logic circuits is challenging due to the resulting low voltage gain and low output voltage levels. Hence, inverters capable of operating at relatively low supply voltages, yet offering high voltage gain and larger output voltage windows than the respective input voltage window are desired. Herein, inverters realized from poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate‐based OECTs are designed and explored, resulting in logic inverters exhibiting high voltage gains, enlarged output voltage windows, and tunable switching points. The inverter designs are based on multiple screen‐printed OECTs and a resistor ladder, where one OECT is the driving transistor while one or two additional OECTs are used as variable resistors in the resistor ladder. The inverters' performances are investigated in terms of voltage gain, output voltage levels, and switching point. Inverters, operating at +/−2.5 V supply voltage and an input voltage window of 1 V, that can achieve an output voltage window with ∼110% increment and a voltage gain up to 42 are demonstrated. [ABSTRACT FROM AUTHOR]

Low‐voltage operating organic electronic circuits with long‐term stability characteristics are receiving increasing attention because of the growing demands for power efficient electronics in Internet of Things applications. To realize such circuits, inverters, the fundamental constituents of many circuits, with stable transfer characteristics should be designed to provide low‐power consumption. Here, a rational inverter design, based on fully screen printed p‐type organic electrochemical transistors with a channel size of 150 × 80 µm2, is explored for driving conditions with input voltage levels that differs of about 1 V. Further, three different inverter circuits are explored, including resistor ladders with resistor values ranging from tens of kΩ to a few MΩ. The performance of single inverters, 3‐stage cascaded inverters and 3‐stage ring oscillators are characterized with respect to output voltage levels, propagation delay, static power consumption, voltage gain, and operational frequency window. Depending on the application, the key performance parameters of the inverter can be optimized by the specific combination of the input voltage levels and the resistor ladder values. A few of the inverters are in fact fully functional up to 30 Hz, even when using input voltage levels as low as (0 V, 1 V). [ABSTRACT FROM AUTHOR]

Abstract: Monolithic integration of an organic field-effect transistor (OFET) and an organic electrochromic display cell operating at around 1V is reported. This was achieved by utilising a common patterned layer of poly(styrenesulfonic acid) (PSSH). In the OFET, PSSH served as the electric double layer capacitors between the gate and the organic semiconductor channel. In the electrochromic pixel, PSSH was included as the electrolyte and transports protons from and to the electrochromic layer upon switching. The enhancement mode OFET enables a relatively faster updating speed, of the display cell, and provides a much simpler addressing and updating scheme as compared to smart pixels including a depletion mode electrochemical transistor. [Copyright &y& Elsevier]

Polyelectrolytes are promising electronicallyinsulating layers for low-voltage organic field effect transistors.However, the polyelectrolyte–semiconductor interface is difficultto manufacture due to challenges in wettability. We introduce an amphiphilicsemiconducting copolymer which, when spread as a thin film, can changeits surface from hydrophobic to hydrophilic upon exposure to water.This peculiar wettability is exploited in the fabrication of polyelectrolyte-gatedfield-effect transistors operating below 0.5 V. The prepared amphiphilicsemiconducting copolymer is based on a hydrophobic regioregular poly(3-hexylthiophene)(P3HT) covalently linked to a hydrophilic poly(sulfonated)-based randomblock. Such a copolymer is obtained in a three-step strategy combiningGrignard metathesis (GRIM), atom transfer radical polymerization (ATRP)processes, and a postmodification method. The structure of the diblockcopolymer was characterized using FT-IR, 1H NMR spectroscopy,and gel permeation chromatography (GPC). [ABSTRACT FROM AUTHOR]

Abstract: We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1V. [Copyright &y& Elsevier]