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Abstract: In this paper, gold (Au) nanocrystals based nonvolatile floating gate OFET memory devices with light assisted program are studied. Programmable memory characteristics were observed according to the programming/erasing operations and the memory window and on/off memory ratio were dramatically improved from 18V, 102 to 63V, 105 through light assisted program, respectively. Good reliability was confirmed by the data retention and endurances characteristics. Therefore, this method has potential applications in organic memory devices and integrated circuits. [Copyright &y& Elsevier]

Abstract: In this paper, the reproducible nonpolar resistive switching is demonstrated in devices with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au for nonvolatile memory application. The switching between high resistance state (OFF-state) and low resistance state (ON-state) does not depend on the polarity of the applied voltage bias, which is different from both the WORM characteristics and the bipolar switching characteristics reported before. The resistive ratio between the ON- and OFF-state is on the order of 103 and increases with the device area decreasing. Both the ON- and OFF-state of the memory devices are stable, showing no significant degradation over 104 s under continuous readout testing. It is proposed that the reduction and oxidation of PEDOT: PSS film might be the switching mechanism. [Copyright &y& Elsevier]