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[Display omitted] • Predominantly VO₂ phase obtained by easy and fast chemical synthesis. • A good quality precursor solution to obtain a stable phase of vanadium. • Dispersing precursor-solution medium influences the final vanadium phase. • Same concentration in different dispersing mediums provides different morphologies. • The VO 2 active layer device showed a write-once-read-many memory behavior. This study explores the influence of precursor solution composition and solvent selection on the synthesis of vanadium oxide (VO 2) thin films tailored for resistive memory applications. The vanadium pentoxide and oxalic acid molar ratio and the dispersing medium (ethanol, water, and their mixture) were varied. Water content significantly influenced the VO 2 phase, morphology, and film thickness. Ethanol yielded mixed vanadium oxide phases VO 2 − Tetragonal, V 2 O 5 − Orthorhombic, and Monoclinic) and a film with minor imperfections. Conversely, the active layer prepared using an aqueous medium showed a predominant VO 2 − Monoclinic phase, albeit with a non-uniform film. An ethanol–water mixture produced the most uniform morphology and a mixture of vanadium oxide phases (VO 2 − Tetragonal, V 2 O 5 - Orthorhombic). All devices displayed resistive switching behavior. VO 2 -containing devices exhibited a more pronounced transition from an ohmic conduction state to a space-charge-limited conduction mechanism. ON-state currents remained consistent, while OFF-state currents varied notably. [ABSTRACT FROM AUTHOR]