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The origins of parasitic heating for photovoltaic (PV) technologies based on silicon, perovskites, and their combination in monolithic tandems are investigated. To quantify heating losses, the cooling score (CS) as a new simple metric, representing the percentage of incident solar irradiance not contributing to module heating is introduced. This is a function of both the optical structure and power conversion efficiency (PCE) of the PV modules and allows a fair comparison between different technologies under identical performance‐evaluation scenarios. Silicon single‐junction devices have the lowest CS due to their low bandgap (causing significant carrier thermalization losses) and their use of light‐trapping structures to increase their PCE which also undesirably increases parasitic absorption of sub‐bandgap photons. Conversely, perovskite single‐junction devices show the highest CS in all studied performance‐evaluation scenarios thanks to their wider bandgap and high absorption coefficient, enabling absorption of all solar photons that may contribute to the photocurrent without requiring light‐trapping structures. While perovskite/silicon tandems minimize thermalization losses, they also usually employ light‐trapping structures in their bottom cell to increase their PCE, which lowers their CS. Through simulation and outdoor experiments, it is demonstrated that an efficient module‐cooling environment may significantly suppress the detrimental effects associated with a low CS. [ABSTRACT FROM AUTHOR]

Over the past few years, perovskite solar cells have arisen as a technology to potentially side with mainstream silicon photovoltaics (PVs) to help drive the transition towards renewable sources of energy. The coupling of perovskites with silicon in a tandem configuration may accelerate this development due to the remarkably high power conversion efficiencies possible with such devices. However, most of the perovskite/silicon tandem achievements so far have been confined to the lab environment, with only a few reported tests under outdoor conditions, using packaged devices. Nevertheless, one of the major challenges for perovskite/silicon tandem technologies, in addition to scale‐up, lies in the cell‐to‐module (CTM) translation, which for the perovskite/silicon tandem concept is complicated by perovskite‐imposed constrains such as a low‐temperature resilience, imposing challenges regarding tabbing and lamination, as well as a high sensitivity to moisture ingress, mandating the search for adequate encapsulation materials and methods. Herein, these challenges are described and assessed in depth and a perspective on future directions toward module design, tailored for perovskite/silicon tandem PVs is given, combining high performance with excellent durability. The discussion also holds relevance for all‐perovskite and other emerging PV technologies seeking market entry. [ABSTRACT FROM AUTHOR]

Sputtered nickel oxide (NiOx) is an attractive hole‐transport layer for efficient, stable, and large‐area p‐i‐n metal‐halide perovskite solar cells (PSCs). However, surface traps and undesirable chemical reactions at the NiOx/perovskite interface are limiting the performance of NiOx‐based PSCs. To address these issues simultaneously, an efficient NiOx/perovskite interface passivation strategy by using an organometallic dye molecule (N719) is reported. This molecule concurrently passivates NiOx and perovskite surface traps, and facilitates charge transport. Consequently, the power conversion efficiency (PCE) of single‐junction p‐i‐n PSCs increases from 17.3% to 20.4% (the highest reported value for sputtered‐NiOx based PSCs). Notably, the N719 molecule self‐anchors and conformally covers NiOx films deposited on complex surfaces. This enables highly efficient textured monolithic p‐i‐n perovskite/silicon tandem solar cells, reaching PCEs up to 26.2% (23.5% without dye passivation) with a high processing yield. The N719 layer also forms a barrier that prevents undesirable chemical reactions at the NiOx/perovskite interface, significantly improving device stability. These findings provide critical insights for improved passivation of the NiOx/perovskite interface, and the fabrication of highly efficient, robust, and large‐area perovskite‐based optoelectronic devices. [ABSTRACT FROM AUTHOR]

Metal halide perovskites have emerged in recent years as promising photovoltaic materials due to their excellent optical and electrical properties, enabling perovskite solar cells (PSCs) with certified power conversion efficiencies (PCEs) greater than 25%. Provided radiative recombination is the dominant recombination mechanism, photon recycling – the process of reabsorption (and re-emission) of photons that result from radiative recombination – can be utilized to further enhance the PCE toward the Shockley–Queisser (S-Q) theoretical limit. Geometrical optics can be exploited for the intentional trapping of such re-emitted photons within the device, to enhance the PCE. However, this scheme reaches its fundamental diffraction limits at the submicron scale. Therefore, introducing photonic nanostructures offer attractive solutions to manipulate and trap light at the nanoscale via light coupling into guided modes, as well as localized surface plasmon and surface plasmon polariton modes. This review focuses on light-trapping schemes for efficient photon recycling in PSCs. First, we summarize the working principles of photon recycling, which is followed by a review of essential requirements to make this process efficient. We then survey photon recycling in state-of-the-art PSCs and propose design strategies to invoke light-trapping to effectively exploit photon recycling in PSCs. Finally, we formulate a future outlook and discuss new research directions in the context of photon recycling. [ABSTRACT FROM AUTHOR]

Charge accumulation at the electron and hole transport layers generates anomalous electrical behavior in perovskite solar cells (PSCs). Hysteresis in the current–voltage characteristic and recombination at the interfaces are the clearest manifestations of this phenomenon, which compromises device performance and stability. Here, the underlying charge‐carrier dynamics of a variety of PSCs are investigated by analyzing their transient photocurrent response. Towards shorter time scales, PSCs often show increasingly severe hysteretic responses. This phenomenon is correlated with the presence of interfacial accumulated charges that hinders the photogenerated carrier extraction process. However, introducing passivating contacts improves the carrier‐injection properties and the devices become completely hysteresis free. These results underline the importance of contact passivation for PSCs and the need to further develop new passivating interlayers that simultaneously eliminate charge‐carrier recombination and provide selective transport for each carrier type at the PSC's contacts. Perovskite ions, under the influence of an electric field, migrate and accumulate at transport layer interfaces. This reduces the extraction of photo‐generated carriers and induces hysteresis in the current/voltage scan. Here, a solution via contact‐passivation of the electron extraction layer is presented. The passivating contacts reduce the influence of the ions and greatly improve the overall performances of solar cells. [ABSTRACT FROM AUTHOR]