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In the present energetic scenario, the development of materials with high potentiality in the technological fields of energy conversion processes, production and storage of hydrogen, are of great interest in the scientific community. In particular, we report for the first time the fabrication of crystalline and homogeneous barium-cerate-based materials in the form of thin films on various substrates. Starting from the β-diketonate precursor sources Ce(hfa)3diglyme, Ba(hfa)2tetraglyme and Y(hfa)3diglyme (Hhfa = 1,1,1,5,5,5-hexafluoroacetylacetone; diglyme = bis(2-methoxyethyl)ether; tetraglyme = 2,5,8,11,14-pentaoxapentadecane), a metalorganic chemical vapor deposition (MOCVD) approach has been successfully applied to the fabrication of BaCeO3 and doped BaCe0.8Y0.2O3 systems in the form of thin films. Structural, morphological and compositional analyses allowed for an accurate determination of the properties of deposited layers. The present approach represents a simple, easily scalable, and industrially appealing process for the production of compact and homogeneous barium cerate thin films. [ABSTRACT FROM AUTHOR]

Copper oxide thin films have been successfully synthesized through a metal–organic chemical vapor deposition (MOCVD) approach starting from the copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Cu(tmhd)2, complex. Operative conditions of fabrication strongly affect both the composition and morphologies of the copper oxide thin films. The deposition temperature has been accurately monitored in order to stabilize and to produce, selectively and reproducibly, the two phases of cuprite Cu2O and/or tenorite CuO. The present approach has the advantages of being industrially appealing, reliable, and fast for the production of thin films over large areas with fine control of both composition and surface uniformity. Moreover, the methylammonium lead iodide (MAPI) active layer has been successfully deposited on the ITO/Cu2O substrate by the Low Vacuum Proximity Space Effusion (LV-PSE) technique. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM) analyses have been used to characterize the deposited films. The optical band gap (Eg), ranging from 1.99 to 2.41 eV, has been determined through UV-vis analysis, while the electrical measurements allowed to establish the p-type conductivity behavior of the deposited Cu2O thin films with resistivities from 31 to 83 Ω cm and carrier concentration in the order of 1.5–2.8 × 1016 cm−3. These results pave the way for potential applications of the present system as a hole transporting layer combined with a perovskite active layer in emergent solar cell technologies. [ABSTRACT FROM AUTHOR]

Perovskite oxide type materials exhibit a great profusion of unique functional properties and for this reason they have been named inorganic chameleon. Nevertheless, their actual applications require the availability of these systems in thin‐film form synthesized through a simple, scalable, and straightforward technique. Metal‐organic chemical vapor deposition (MOCVD) has been shown to be an outstanding process to prepare thin films of multi‐component oxides. Herein, the focus is devoted to oxide perovskite thin films on both single crystal and non‐single crystal substrates through MOCVD processes. This study discusses the principles and the basic rules governing conventional, plasma‐enhanced, and liquid‐assisted MOCVD processes. Among a plethora of oxide perovskites, several classes of functionalities belonging to the perovskite class: from superconductors to dielectrics and giant‐k dielectrics, from colossal magnetoresistance to ionic conductors, piezoelectrics and ferroelectrics, are explored in detail. [ABSTRACT FROM AUTHOR]