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Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient stability because Sn2+ is readily oxidized to Sn4+ in air. To address this issue, Ruddlesden–Popper (RP) perovskites featuring large organic cations emerge as promising materials for FETs. In this article, a comprehensive overview of the properties and advantages of RP‐phase tin‐based halide perovskites used in FETs are provided. Recent advancements in 2D and 2D/3D RP tin‐based perovskite FETs are examined, and challenges related to the fabrication of uniform large‐area films and strategies for improving ambient stability and operational durability are discussed. In this review article, the potential of RP perovskites for FET applications is emphasized and the need for further research to unlock their full potential is highlighted. [ABSTRACT FROM AUTHOR]

2D tin‐based perovskites have gained considerable attention for use in diverse optoelectronic applications, such as solar cells, lasers, and thin‐film transistors (TFTs), owing to their good stability and optoelectronic properties. However, their intrinsic charge‐transport properties are limited, and the insulating bulky organic ligands hinder the achievement of high‐mobility electronics. Blending 3D counterparts into 2D perovskites to form 2D/3D hybrid structures is a synergistic approach that combine the high mobility and stability of 3D and 2D perovskites, respectively. In this study, reliable p‐channel 2D/3D tin‐based hybrid perovskite TFTs comprising 3D formamidinium tin iodide (FASnI3) and 2D fluorinated 4‐fluoro‐phenethylammonium tin iodide ((4‐FPEA)2SnI4) are reported. The optimized FPEA‐incorporated TFTs show a high hole mobility of 12 cm2 V−1 s−1, an on/off current ratio of over 108, and a subthreshold swing of 0.09 V dec−1 with negligible hysteresis. This excellent p‐type characteristic is compatible with n‐type metal‐oxide TFT for constructing complementary electronics. Two procedures of antisolvent engineering and device patterning are further proposed to address the key concern of low‐performance reproducibility of perovskite TFTs. This study provides an alternative A‐cation engineering method for achieving high‐performance and reliable tin‐halide perovskite electronics. [ABSTRACT FROM AUTHOR]

Tin (Sn2+)‐based halide perovskites have been developed as the most promising alternatives to their toxic Pb‐based counterparts in optoelectronic devices. However, the facile tin vacancy formation and easy oxidization characteristics make Sn2+‐based perovskites highly p‐doped with excessive hole concentrations, which significantly hinder their applications. Herein, we demonstrate a potent hole inhibitor of antimony fluoride (SbF3), which possesses a higher hole‐suppression capability than conventional tin fluoride (SnF2). A small amount of SbF3 allows a wide range of hole‐density modulation with no or less SnF2 addition, thus mitigating the negative effects of using only SnF2. A SnF2/SbF3 co‐additive approach was further developed to achieve high‐performance Sn2+ perovskite thin‐film transistors operated in the enhancement mode with a five‐fold enhancement of the field‐effect mobility and improved operational stability compared to using only SnF2. We expect that the SbF3 hole suppressor and co‐additive approach can provide opportunities for the development of high‐efficiency Sn2+‐perovskite optoelectronic devices. [ABSTRACT FROM AUTHOR]

2D metal halide perovskites are attracting great interest for their diverse applications owing to their intrinsic superior stability compared to their 3D counterparts; however, their device performance is limited by insufficient charge transport because of the insulating bulky organic ligands. Electrical doping is a direct and efficient method for improving the electrical properties of emerging semiconductors; however, its feasibility and mechanism remain elusive in metal halide perovskites. To clarify this issue, in this study, diverse organic/inorganic molecules are deposited on a typical phenylethyl ammonium tin iodide ((PEA)2SnI4) perovskite by constructing a heterojunction. In addition, the variations in the electrical performance of the perovskite semiconductor are monitored. The low work function of the dopant molecules enables the spontaneous electron transfer from the perovskite, resulting in the p‐doping effect on the perovskite host, which is verified by a series of characterization methods. The efficient charge transfer without deterioration of the perovskite microstructure improves the Hall mobility up to 100 cm2 V−1 s−1. Therefore, this work demonstrates the high doping efficiency of halide perovskites using a simple molecular charge transfer approach and provides a new opportunity for employing 2D perovskites in high‐efficiency optoelectronic devices. [ABSTRACT FROM AUTHOR]

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits. Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm2V–1S–1, which can be integrated with commercial metal oxide transistors on a single chip. [ABSTRACT FROM AUTHOR]

Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays. [ABSTRACT FROM AUTHOR]

Keywords: 2D Sn 2+-based perovskites; hall mobility modulations; molecular charge transfer dopants; perovskite transistors EN 2D Sn 2+-based perovskites hall mobility modulations molecular charge transfer dopants perovskite transistors 1 1 1 09/21/22 20220919 NES 220919 B 2D Sn SP 2+ sp -Based Perovskites b In article number 2204870, Yong-Young Noh and co-workers demonstrate the high doping efficiency of halide perovskites using a simple molecular charge transfer approach and provides a new opportunity for employing 2D perovskites in high-efficiency optoelectronic devices. 2D Sn 2+-based perovskites, hall mobility modulations, molecular charge transfer dopants, perovskite transistors Molecular Doping Enabling Mobility Boosting of 2D Sn2+-Based Perovskites (Adv. Funct. [Extracted from the article]

The lack of high-performance p-type semiconducting materials hinders the integration of complementary metal-oxide semiconductors with well-established n-type metal-oxide counterparts. Although tin halide perovskites are promising p-type material candidates, their practical implementation is hindered by excessive hole concentrations and difficulties in precisely controlling crystallization, which leads to poor device performance and yield. In this paper, we propose a formate pseudohalide engineering method to overcome these issues and demonstrate high-performance tin perovskite thin-film transistors (TFTs). The incorporation of formate anion greatly suppresses the vacancy defects at the surfaces of the perovskite films with an increase in crystallinity and grain size. This reduces the hole concentration and eliminates the dependence on the addition of excessive tin fluoride for hole suppression. Hence, high-performance TFTs with a high average field-effect hole mobility of 57.34 cm2 V−1 s−1 and on/off current ratios surpassing 108 can be achieved, approaching p-channel low-temperature polysilicon devices. [Display omitted] [ABSTRACT FROM AUTHOR]