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Large‐scale solution printing perovskite photovoltaics is one of the key technological advantages in comparison to the manufacturing of wafer‐based solar cells (Si, GaAs, etc.). Herein, all‐slot‐die‐coated perovskite solar cells (PSCs) in p–i–n (inverse) configuration with a process fully performed out of the glove box in ambient conditions are demonstrated. The successful implementation of the approach is demonstrated for devices based on the MAPbI3 and CsFAPbI3 perovskite absorbers with four slot‐die‐coated layers—NiOx/perovskite/PCBM/BCP. Noticeably, the use of Cl‐containing additives MACl and FACl in combination with vacuum quenching is found to be essential for the reproducible and controllable crystallization of the perovskite films. Moreover, vacuum quenching shows beneficial results also for the morphology of thin electron transporting layers—PCBM (40 nm) and BCP (11 nm). Finally, the power conversion efficiency (PCE) of the all‐slot‐die‐coated PSCs reaches the level of >16% for MAPbI3 and >17% for CsFAPbI3‐based devices. Slot‐die coating fabrication is successfully upscaled for minimodules (total active area 2.1 cm2), which demonstrates up to 14.9% of PCE. This result demonstrates the high potential of the slot‐die printing for sheet‐to‐sheet fabrication of PSCs and unravels the specifics for each functional layer in the p–i–n device. [ABSTRACT FROM AUTHOR]

The perovskite solar cell technology is showing rapid progress in delivering high power conversion efficiency. This is not limited to conventional 1 SUN illumination, but state-of-the-art results have also been also demonstrated for a low-light condition such as indoor illumination. In this work, we show that very efficient low-light perovskite solar cells can be realized in the inverted configuration with the use of NiO as a hole transporting material by employing a conventional high-temperature process (300 °C, compact NiO) or a low-temperature process (<100 °C) based on nanoparticle NiO. The power density of 90.2 μW/cm2 at 1000 lux was achieved for compact NiO device, while 71.6 μW/cm2 was obtained with nanoparticle NiO cells under the same illumination. A detailed electrical, optical, and morphological characterization permitted to identify the reasons for the difference between compact and nanoparticle NiO. Beside the difference in power density, nanoparticle NiO permitted to realize the first low temperature inorganic hole transporting layer for low-light p-i-n perovskite solar cell and, as we show, this could be easily scaled up to 1 cm2 without suffering for performance losses moving from small to large area. [Display omitted] • First-time report about the application of the low-temperature nanoparticle NiO HTL for indoor perovskite photovoltaics. • Direct comparison of two NiO HTL types for low-light perovskite solar cells fabricated with the high-temperature combustion method (300 °C), and low-temperature deposition from nanoparticle dispersion (100 °C). • Determination of difference in the quality of NiO/perovskite interface at dark; 100–1000 lux of LED light and 1 sun conditions. • Decrease of series resistance with the use of nanoparticle NiO HTL in two times compared to the high-temperature method of NiO fabrication. • Maximum power density: >17 μW/cm2 at 200 lux (PCE 29.1%); >98 μW/cm2 at 1000 lux (PCE 32.9%) without hysteresis in IV curves. [ABSTRACT FROM AUTHOR]