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The properties of electron transport layers play a crucial role in determining the performance of perovskite solar cells. Here we reported that graphdiyne doped in both PCBM and ZnO films of perovskite solar cells with an inverted structure based on MAPbI 3 for the first time. A high efficiency of 20.0% was achieved in MAPbI 3 perovskite solar cells. Moreover, the J - V hysteresis and stability were significantly improved as well. It was found that dual doping graphdiyne not only increased electrical conductivity, electron mobility, and charge extraction ability in the electron transport layers but also improved film morphology of the electron transport layers and reduced charge recombination which contribute to fill factor improvement. Therefore the results indicate that dual doping graphdiyne is a promising strategy to enhance perovskite solar cells performance. [ABSTRACT FROM AUTHOR]

Chlorine‐substituted graphdiyne (ClGD) is employed into electron transport layers (ETLs) of MAPbI3‐based perovskite solar cells for the first time, forming a high‐quality film with superior film morphology and electrical conductivity as compared with pristine [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) film. Strikingly, a champion power conversion efficiency of 20.34% is achieved, showing a 19% enhancement compared with the counterparts (17.08%). Simultaneously, ClGD‐PCBM‐based devices show suppressed J–V hysteresis. It is experimentally and theoretically demonstrated that the interactions of derivated graphdiyne and PCBM stem from four types of noncovalent bonds, which contribute to the improved device performance. The results suggest that derivated graphdiyne‐based interfacial material is promising for the applications in solar cells and other photoelectric devices. [ABSTRACT FROM AUTHOR]

Hole-transporting materials play an important role in perovskite solar cells. In this study, we introduced a novel hole-transporting material without p-type dopant, a tetrathiafulvalene derivative anchored with eight carboxyl groups (TTA) into inverted structure perovskite solar cells. The devices with TTA as hole-transporting layer showed high power conversion efficiency of 16.7%, which was 44.5% improvement compared with the reference devices without hole-transporting layer. The performance improvement was ascribed to three factors: 1) the better match of energy level between ITO and perovskite layer; 2) enhanced hole extraction at anode interface; 3) improved perovskite morphology. [ABSTRACT FROM AUTHOR]