1. Phase transitions in BaTiO3 thin films and BaTiO3/BaZrO3 superlattices.
- Author
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Yuzyuk, Yu. I., Sakhovoy, R. A., Maslova, O. A., Shirokov, V. B., Zakharchenko, I. N., Belhadi, J., and El Marssi, M.
- Subjects
PHASE transitions ,THIN films ,SUPERLATTICES ,RAMAN spectra ,FERROELECTRICITY - Abstract
Using pulsed laser deposition, we grew a ferroelectric [BaTiO
3 ]Λ/2 /[BaZrO3 ]Λ/2 (BT/BZ) superlattice with a stacking periodicity of Λ = 256 A and a BT single film on a La½ Sr½ CoOa-buffered (00l)MgO substrate, and then studied the phase transitions of these materials. At room temperature, the polarized Raman spectra of the BT film corresponded to a ferroelectric orthorhombic C2v 14 phase with the polar axis oriented in the plane of the substrate. A ferroelectric-paraelectric phase transition in the BT film occurred at ~ 450 K. Upon cooling to ~ 300 K, a phase transition to the monoclinic Cs 3 phase occurred. These experimental results agree well with a theoretical "temperature-misfit strain" phase diagram of the BT film. We found no evidence of phase transitions in the BT/BZ superlattice below room temperature. The phase transition to the paraelec-tric phase in the BT/BZ superlattice increased in temperature because of lattice mismatch between the BT and BZ layers. A desirable Curie temperature can be tailored rather precisely by varying the layer thicknesses or the BT/BZ ratio in the superlattice. The BT/BZ superlattices are very good for device applications because their ferroelectric phase with in-plane polarization can remain stable at least from 0 K up to 723 K, and even at higher temperatures in superlattices with smaller periodicities. [ABSTRACT FROM AUTHOR]- Published
- 2014
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