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The minimum achievable particle beam emittance in an electron accelerator depends strongly on the intrinsic emittance of the photocathode electron source. This is measurable as the mean longitudinal and transverse energy spreads in the photoemitted electron beam (MLE and MTE respectively); consequently, MLE and MTE are notable figures of merit for photocathodes used as electron sources in particle accelerators. The overall energy spread is defined by the sum of the MTE and the MLE, and the minimization of MTE is crucial to reduce emittance and thus generate a high-brightness electron beam. Reducing the electron beam emittance in an accelerator that drives a Free-Electron Laser (FEL) delivers a significant reduction in the saturation length for an x-ray FEL, thus reducing the machine's construction footprint and operating costs while increasing the x-ray beam brightness. The ability to measure the transverse energy distribution curve of photoelectrons emitted from a photocathode is a key enabler in photocathode research and development that has prompted the Accelerator Science and Technology Centre (ASTeC) at the STFC Daresbury Laboratory to develop the Transverse Energy Spread Spectrometer to make these crucial measurements. We present details of the design for the upgraded TESS instrument with measured data for copper (100), (110), and (111) single-crystal photocathodes illuminated at UV wavelengths around 266 nm. [ABSTRACT FROM AUTHOR]

We present measurements of the transverse and longitudinal energy spread of photoelectrons emitted from a GaAsP photocathode as a function of its degradation state. The cathode was initially activated to a state of negative electron affinity in our photocathode preparation facility, achieving a quantum efficiency of 3% at a wavelength of 532 nm. It was then transferred under XHV conditions to our transverse energy spread spectrometer, where energy spread measurements were made while the photocathode was progressively degraded through a controlled exposure to oxygen. Data have been collected under photocathode illumination at 532 nm, and the changing photoelectron energy distribution associated with the changes in the level of electron affinity due to quantum efficiency degradation through an exposure to 0.25 L of oxygen has been demonstrated. Our experiments have shown that GaAsP boasts a significantly higher resilience to degradation under exposure to oxygen than a GaAs photocathode, though it does exhibit a higher level of mean transverse energy. Coupled with the favourable published data on GaAsP photoemission response times, we conclude that GaAsP is a viable candidate material as a particle accelerator electron source. [ABSTRACT FROM AUTHOR]

Atomic hydrogen, produced by thermal dissociation of H2 molecules inside a hot tungsten capillary, is shown to be an efficient tool for multiple recleaning of degraded surfaces of high quantum efficiency transmission-mode GaAs photocathodes within an ultrahigh vacuum (UHV) multichamber photoelectron gun. Ultraviolet quantum yield photoemission spectroscopy has been used to study the removal of surface pollutants and the degraded (Cs,O)-activation layer during the cleaning procedure. For photocathodes grown by the liquid-phase epitaxy technique, the quantum efficiency is found to be stable at about 20% over a large number of atomic hydrogen cleaning cycles. A slow degradation of the quantum efficiency is observed for photocathodes grown by metal-organic chemical vapor deposition, although they reached a higher initial quantum efficiency of about 30%–35%. Study of the spatial distributions of photoluminescence intensity on these photocathodes proved that this overall degradation is likely due to insertion of a dislocation network into the mechanically strained photocathode heterostructures during multiple heating cycles and is not due to the atomic hydrogen treatment itself. [ABSTRACT FROM AUTHOR]

The (Cs,O)-activation procedure for p-GaAs(Cs,O)-photocathodes was studied with the aim of demarcating the domains of validity for the two practical models of the (Cs,O)-activation layer: The dipole layer (DL) model and the heterojunction (HJ) model. To do this, the photocathode was activated far beyond the normal maximum of quantum efficiency, and several photocathode parameters were measured periodically during this process. In doing so, the data obtained enabled us to determine the domains of validity for the DL- and HJ-models, to define more precisely the characteristic parameters of the photocathode within both of these domains and thus to reveal the peculiarities of the influence of the (Cs,O)-layer on the photoelectron escape probability. [ABSTRACT FROM AUTHOR]