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2. Probing States of a Double Acceptor in CdHgTe Heterostructures via Optical Gating.

3. Mercury vacancies as divalent acceptors in HgTe/CdHgTe structures with quantum wells.

4. Impurity-induced photoconductivity of narrow-gap Cadmium-Mercury-Telluride structures.

5. Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B.

6. Relaxation kinetics of impurity photoconductivity in p-Si:B with various levels of doping and degrees of compensation in high electric fields.

7. Features of impurity-photoconductivity relaxation in boron-doped silicon.

8. Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures.

9. Optical transitions between acceptor states in uniaxially compressed germanium.

10. Shallow acceptors in strained multiquantum-well Ge/Ge1-xSix heterostructures.

12. Modification to the central-cell correction of germanium acceptors.

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