1. GeSn/GaAs Hetero-Structure by Magnetron Sputtering.
- Author
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Qian, Li, Tong, Jinchao, Suo, Fei, Liu, Lin, Fan, Weijun, Luo, Yu, and Zhang, Dao Hua
- Subjects
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MAGNETRON sputtering , *MAGNETRONS , *CHEMICAL vapor deposition , *AUDITING standards , *PHOTODETECTORS , *INDIUM gallium arsenide - Abstract
We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs heterostructure photodetector is first demonstrated with a detectivity of $1.8\times 10^{9}$ Jones achieved at 1450 nm under an applied reverse voltage bias of −0.1 V, which is comparable to or even better than the GeSn-based photodetectors grown by chemical vapor deposition. The work provides an alternative technique for low cost and large-area fabrication of GeSn based devices. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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