1. Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices.
- Author
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Cao, Yang, Dzuba, Brandon, Magill, Brenden A., Senichev, Alexander, Nguyen, Trang, Diaz, Rosa E., Manfra, Michael J., McGill, Stephen, Garcia, Carlos, Khodaparast, Giti A., and Malis, Oana
- Subjects
MOLECULAR beam epitaxy ,PHOTOLUMINESCENCE ,X-ray diffraction measurement ,THIN films ,QUANTUM wells ,SUPERLATTICES - Abstract
Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In
0.09 Ga0.91 N/Al0.19 Ga0.81 N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition energies are consistently lower than the calculation based on structural parameters extracted from x-ray diffraction measurements. This indicates the presence of indium composition fluctuations in InGaN and hence local bandgap reduction that produces charge localization centers. The spectral width of the low-temperature PL of our m-plane InGaN/AlGaN superlattices is narrower than previously reported for m-plane InGaN/GaN quantum wells grown by MOCVD. The PL integrated intensity drops rapidly, though, as the temperature is increased to 300 K, indicating strong non-radiative recombination at room temperature. Time-resolved PL at low temperatures was performed to characterize the relaxation time scales in an undoped and a doped superlattice. [ABSTRACT FROM AUTHOR]- Published
- 2020
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