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The photoluminescence (PL) of cuprous iodide (CuI) has drawn significant attention in the scientific community. In order to investigate the growth methods and environmental conditions on the fluorescence, we first prepared CuI via immersion of copper in hydroiodic acid. This method is beneficial for the growth of large grains (> 20 μm) with intensive red fluorescence emission at 708 nm. The fluorescence has a high quantum yield (34 %), and superior stability. Then we studied the fluorescence behaviors in water. We observed fluorescence quenching, which is due to the energy transfer. Additionally, we studied the effect of temperature on the fluorescence. We found that the fluorescence intensity increased initially then decreased as the temperature increased. The underlying mechanism was analyzed in terms of fluorescence quencher (water) removal and thermal quenching. By controlling heating, we successfully obtained intensive and pure red fluorescence. Finally, we explored the potential application of the red fluorescent of CuI in optical communication. The results demonstrate bit error rates within permissible range of forward error correction, highlighting the superior performance of CuI in optical communication systems. [ABSTRACT FROM AUTHOR]

Tungsten disulfide (WS2) monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL) emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2. [ABSTRACT FROM AUTHOR]

Abstract: The nano-ZnO embedded SiO2 glass was prepared by a four-step process: (1) formation of colloidal suspension of Zn(OH)2, (2) synthesis of silica sol, (3) mixture of Zn(OH)2 colloidal suspension and silica sol to form precursor glass, and (4) annealing of the precursor glass to obtain the nano-ZnO embedded glass. The results presented herein focused on the structural characterization and photoluminescence (PL) characteristics of the nano-ZnO embedded glass. It is shown that the PL intensity of the ultraviolet emission of the glass was dependent on the preparation conditions, and the pure ultraviolet emission could be controlled by the pH value of the colloidal suspension of Zn(OH)2 and the silica sol. [Copyright &y& Elsevier]