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We present a method to reduce the intrinsically high InP quantum dot density embedded in a Ga0.51In0.49P barrier by introducing an InGaAs quantum dot seed layer. The additional strain reduces the total InP quantum dot density by around one order of magnitude from 2×1010 to 3×109 cm-2 but only ∼1% of the InP nanostructures seem to be optically active (107 cm-2). Therefore, microphotoluminescence measurements could be accomplished without masks. We found resolution-limited photoluminescence linewidths (ΔE<100 μeV), good signal-to-noise ratios (∼65), single-photon emission behavior [g(2)(τ=0)=0.3], and excitonic decay times of typically between 1 and 2 ns. Furthermore the structural quantum dot properties were investigated. [ABSTRACT FROM AUTHOR]

Using micro-photoluminescence, we demonstrate single-photon emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in a planar microcavity realized by monolithically grown high reflectivity AlGaAs distributed Bragg reflectors. A full width at half maximum of 130 μeV at 5 K was observed from a single quantum dot coupled to the fundamental cavity resonance. Photon correlation measurements performed under continuous wave excitation show a clear antibunching behavior [g(2)(0)=0.13] as expected for a single-photon emitter. Saturation count rates up to 1.5 MHz (8.1 MHz into the first lens, with an extraction efficiency of 4.1%) were observed. [ABSTRACT FROM AUTHOR]