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Strong plasmon–exciton interactions in monolayer transition‐metal dichalcogenides (TMDs) is emerging as a promising material platform for light emissions, nonlinear optics, and quantum communications, and their realizations require highly localized electric fields parallel to the transition dipole moment of TMD excitons. Here, a systematic study of light–matter interaction in planar dimer nanoantenna of nanoscale gaps coupled with monolayer WS2 is presented, where the effects of the local field enhancement and spatial mode overlap in the plasmon–exciton coupling strength are experimentally investigated. Importantly, anticrossing behaviors in the strong coupling regime with a Rabi splitting of Ω = 118 meV for gold bowtie antennas with 7 nm gaps and Ω = 138 meV for gold dimer arrays with 10 nm gaps are demonstrated. [ABSTRACT FROM AUTHOR]

We present the design, fabrication, and characterization of middle-wavelength infrared photodetector based on active InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb substrate. In this structure, the active absorption layer is sandwiched between thin quaternary p-type and n-type AlInAsSb layers and a heavily doped AlGaSb layer is introduced to reduce dark current. We observed good lattice matching between GaSb substrates and epitaxial layers by high-resolution X-ray diffraction. Photoluminescence (PL) spectrum at 13 K shows a full width at half maximum of ~ 29 meV, demonstrating good quality active absorption layers. The band gap energy of InAs0.9Sb0.1 is derived as ~ 0.322 eV at 0 K by Varshni fitting from PL spectra at different temperatures. A rather flat room-temperature responsivity of ~ 0.8-0.9 AW−1 over a wavelength range of ~ 2.1 µm is demonstrated without antireflection coating. A detectivity of 8.9 × 108 cm Hz1/2 W−1 at 3.5 µm for room-temperature operation is achieved under applied bias of − 0.5 V. [ABSTRACT FROM AUTHOR]