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Magnetophotoluminescence properties of Zn0.88Mn0.12Se thin films grown by metal-organic chemical vapor deposition on GaAs substrates are investigated in fields up to 10 T. The linewidth of the excitonic luminescence peaks decreases with the increasing magnetic field (<1 T), but the peak energy is almost unchanged. There is a crossover of the photoluminescence intensities between interband and bound excitonic transitions as the magnetic field is increased to about 1 T. These behaviors are interpreted by the strong tuning of the local alloy disorder potential by the applied magnetic field. In addition, the magnetic field-induced suppression of the energy transfers from excitons to Mn2+ ions is also observed. [ABSTRACT FROM AUTHOR]

Optical properties of ZnO quantum dots (QDs) capped with polyvinyl pyrrolidone (PVP) molecules have been investigated. It is demonstrated that surface modification by PVP can dramatically change the emission spectra of the ZnO QDs. At the optimized condition with a PVP/Zn[sup 2+] ratio of 3:5, the photoluminescence (PL) spectrum of ZnO QDs shows a strong ultraviolet (UV) emission while the low energy green emission is fully quenched. This is a result of the surface passivation of the ZnO QDs by the PVP molecules. The origin of the green emission is attributed to the surface states associated with oxygen vacancies. Temperature and excitation power dependent PL studies suggest that the UV emission is associated with localized states. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Organic dye molecules of styryl 7 were introduced into the channels of AlPO[sub 4]-5 single crystals. Polarized absorption and photoluminescence spectra of the dye molecules were investigated. The polarization angle dependence of the absorption and photoluminescence intensity indicates that the dye molecules are highly oriented in the channels. The hexagonal-shaped AlPO[sub 4]-5 single crystal serves as a natural microcavity for lasing action of the dye molecules. The microcavity modes of the lasing action were also demonstrated. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A set of GaAs[sub l-x]N[sub x] samples with small nitrogen composition (x< 1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states. [ABSTRACT FROM AUTHOR]

InAs quantum dots (QDs) grown on GaAs surface are investigated. The observed abnormal photoluminescence (PL) properties, including extremely sharp high-energy peaks, almost temperature-independent linewidth, and fast thermal quenching, are discussed in terms of the strong quantum confinement effects due to the absence of a cap layer and the lack of carrier redistribution channel caused by the small number of QDs capable of contributing to PL and the high-density surface defects. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]