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Chiral semiconductor nanostructures have received enormous attention due to their emerging circularly polarized luminescence (CPL) properties. However, compared with well‐studied photoluminescence (PL), the reported CPL is much weaker and more challenging to be modulated. Herein, we describe a new approach for acquiring the intense and tunable CPL from inorganic chiral photonic crystals (CPCs) doped with semiconductor quantum dots (QDs). Unprecedentedly, the sign, position and intensity of CPL peaks can be precisely controlled by manipulating either the photonic band gap of CPCs or luminescence wavelength of QDs and a giant absolute dissymmetry factor |glum| up to 0.25 is obtained. More importantly, the origin of the CPL modulation is clearly elucidated by both experiment and theory. This work lays the foundation for the construction of next‐generation high‐performance CPL‐based devices. [ABSTRACT FROM AUTHOR]

Chiral semiconductor nanostructures have received enormous attention due to their emerging circularly polarized luminescence (CPL) properties. However, compared with well‐studied photoluminescence (PL), the reported CPL is much weaker and more challenging to be modulated. Herein, we describe a new approach for acquiring the intense and tunable CPL from inorganic chiral photonic crystals (CPCs) doped with semiconductor quantum dots (QDs). Unprecedentedly, the sign, position and intensity of CPL peaks can be precisely controlled by manipulating either the photonic band gap of CPCs or luminescence wavelength of QDs and a giant absolute dissymmetry factor |glum| up to 0.25 is obtained. More importantly, the origin of the CPL modulation is clearly elucidated by both experiment and theory. This work lays the foundation for the construction of next‐generation high‐performance CPL‐based devices. [ABSTRACT FROM AUTHOR]