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We report the switchable photovoltaic effects in graphene/BiFeO3/Pt heterostructures. Pure phase polycrystalline BiFeO3 films were deposited on Pt/TiO2/SiO2/Si substrates by pulse laser deposition. A bilayer graphene was transferred onto the BiFeO3 film which serves as transparent conducting electrodes. The heterostructures showed switchable photovoltaic effect depending on ferroelectric polarization directions indicating depolarization field induced separation of photogenerated carriers. The open circuit voltage (VOC) and short circuit current density (JSC) were measured to be ~ 110 mV, ~92 μA/cm² in positive polarity and similar values were obtained when the polarity was reversed. The JSC and VOC also showed rapid response (< 100 ms) as a function of light exposure time. [ABSTRACT FROM AUTHOR]

Highlights: [•] High quality thin film of multiferroic BiFeO3 on SrRuO3 is grown by RF Sputtering. [•] The Pt/BFO/SRO structure showed diode like behavior through I–V measurement. [•] Appreciable VOC and JSC were observed with illumination of white light. [•] The photoresponse at zero bias of BFO film showed rapid increase in photocurrent. [•] Application of BFO film for photosensitive capacitor is demonstrated. [ABSTRACT FROM AUTHOR]

We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (VOC) and short circuit current (JSC) were found to be ~0.022 V and ~650 μA/cm², respectively after positive poling, whereas significant difference in VOC ~ 0.018V and JSC ~ 700 μA/cm² was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field. [ABSTRACT FROM AUTHOR]

We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with nonoverlapping Set and Reset voltages, On/Off resistance ratio of ~104 and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of ~100 mW/cm². Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. [ABSTRACT FROM AUTHOR]

We report photovoltaic (PV) effect in multiferroic Bi0.9Sm0.1Fe0.95Co0.05O3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (Voc) and the short-circuit current density (Jsc) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm−2. Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. [ABSTRACT FROM AUTHOR]