Search

We report on six-junction inverted metamorphic (6J IMM) solar cells developed for concentrator applications. Monolithic III-V structures are grown by metal organic vapor phase epitaxy with junction bandgaps of 2.06, 1.70, 1.40, 1.16, 0.94, and 0.70 eV. The top three junctions are lattice-matched to the GaAs substrate, but the bottom three junctions use three consecutive metamorphic compositionally graded buffers to transition the lattice constant to GaxIn1-xAs compositions with the previously listed bandgaps. Performance of 6J IMM devices at one-sun AM1.5 Direct conditions gives VOC = 5.301 V, JSC = 8.05 mA/cm2, fill factor = 83.9%, and efficiency = 35.8%. Promising operation at high concentration is achieved but the spectrum was not controlled to AM1.5D. Tunnel junctions do not limit until at least several hundred suns. High concentration performance appears to be limited by internal heterojunction barriers created by zinc diffusion that decreases the fill factor. The properties of each junction within the 6J IMM have been separately characterized through electroluminescence and luminescent coupling measurements. [ABSTRACT FROM AUTHOR]

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure. [ABSTRACT FROM AUTHOR]