1. Dilution effect of Ar/H2 on the microstructures and photovoltaic properties of nc-Si:H deposited in low frequency inductively coupled plasma.
- Author
-
Zhou, H. P., Wei, D. Y., Xu, S., Xiao, S. Q., Xu, L. X., Huang, S. Y., Guo, Y. N., Yan, W. S., and Xu, M.
- Subjects
ARGON ,MICROSTRUCTURE ,PHOTOVOLTAIC power systems ,INDUCTIVELY coupled plasma spectrometry ,SILICON ,HYDROGEN ,THIN films - Abstract
This work reports upon the dilution effect of Ar + H2 on the microstructures, optical, and photovoltaic properties of the hydrogenated nanocrystalline silicon (nc-Si:H) thin films. High crystallinity (up to 82.6%) nc-Si:H thin films were fabricated from silane diluted by Ar + H2 in a low-frequency inductively coupled plasma (LFICP) facility at a low temperature of 300 °C. The substitution of H2 by Ar in the diluent gas leads to an increase of the deposition rate, grain size, and crystallinity, and a decrease of the optical bandgap. Varying the Ar content caused a fluctuation of the H concentration and a change of the preferential orientation from (111) to (220) in the synthesized thin films. These effects physically originated from changes of the Ar + H2 + SiH4 plasma environment in the LFICP system. The enhancement of the dissociation of SiH4/H2 molecules by ion Ar+ and the metastable state Ar* were discussed in terms of related chemical reactions between the diluent gases and silane. Furthermore, it was found that a heterojunction solar cell prototype based on the as-deposited nc-Si:H thin films exhibits an excellent photovoltaic response. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
- View/download PDF