1. Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
- Author
-
Salvatore Stivala, Antonio Benfante, Alfonso Carmelo Cino, E.F. Calandra, Ralph Krupke, Simone Dehm, Antonino Parisi, Marco A. Giambra, Romain Danneau, Riccardo Pernice, Alessandro Busacca, Benfante, Antonio, Giambra, Marco A., Pernice, Riccardo, Stivala, Salvatore, Calandra, Enrico, Parisi, Antonino, Cino, Alfonso C., Dehm, Simone, Danneau, Romain, Krupke, Ralph, and Busacca, Alessandro.
- Subjects
lcsh:Applied optics. Photonics ,Technology ,Materials science ,Atomic and Molecular Physics, and Optic ,Infrared ,Gate dielectric ,Physics::Optics ,02 engineering and technology ,Dielectric ,graphene field effect transistor ,01 natural sciences ,Settore ING-INF/01 - Elettronica ,law.invention ,Condensed Matter::Materials Science ,infrared detectors ,law ,0103 physical sciences ,microwave transistor ,lcsh:QC350-467 ,Electrical and Electronic Engineering ,010306 general physics ,Graphene ,graphene field effect transistors ,microwave transistors ,Atomic and Molecular Physics, and Optics ,business.industry ,Photoconductivity ,Transistor ,lcsh:TA1501-1820 ,021001 nanoscience & nanotechnology ,infrared detector ,2018-020-021849 ALD ,Optoelectronics ,0210 nano-technology ,business ,ddc:600 ,Microwave ,lcsh:Optics. Light ,DC bias - Abstract
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.
- Published
- 2018