1. Large‐Scale Room‐Temperature Synthesis of the First Sb3+‐Doped Organic Ge(IV)‐Based Metal Halides with Efficient Yellow Emission for Solid‐State Lighting and Latent Fingerprint Detection
- Author
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Xuefei He, Qilin Wei, Hui Peng, Yuchen Li, Xiao Wang, Bao Ke, Jialong Zhao, and Bingsuo Zou
- Subjects
Ge(IV)‐based metal halides ,latent fingerprint detections ,photoluminescences ,self‐trapped excitons ,white light‐emitting diodes ,Physics ,QC1-999 ,Chemistry ,QD1-999 - Abstract
Organic–inorganic hybrid Ge(II)‐based metal halides have garnered significant interest due to their intriguing photophysical properties and environmentally friendly characteristics. However, challenges such as poor stability, low emission intensity, and a complex synthesis process have hindered their widespread application. In addressing these issues, a breakthrough in the large‐scale production of Sb3+‐doped Ge(IV)‐based metal halide (C13H14N3)2GeCl6 phosphors at room temperature through a straightforward solution method is presented. The synthesized compound exhibits a remarkable bright broad yellow emission band at 590 nm, boasting a photoluminescence quantum efficiency of 99.53 ± 0.06% the highest among Ge(IV)‐based metal halides. Notably, the introduction of Sb3+ induces the formation of Jahn–Teller‐like self‐trapped excitons in [SbCl6]3− species, attributable to lattice distortion and strong electron–phonon coupling. Consequently, Sb3+‐doped (C13H14N3)2GeCl6 demonstrates a large Stokes shift (221 nm) and a prolonged decay lifetime (3.06 μs). Furthermore, the Sb3+‐doped compound exhibits commendable chemical‐ and photostability, prompting exploration in applications such as white light‐emitting diodes and latent fingerprint detection. This work not only provides a practical approach for designing economically viable, environmentally friendly, and highly efficient emission phosphors but also paves the way for novel directions in their expanded application.
- Published
- 2024
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