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Your search keyword '"Viitanen, Minna M."' showing total 2 results
Start Over Author "Viitanen, Minna M." Topic physics
2 results on '"Viitanen, Minna M."'

1. Atomic layer deposition of hafnium oxide on germanium substrates

Author

Delabie, Annelies, Puurunen, Riikka L., Brijs, Bert, Caymax, Matty, Conard, Thierry, Onsia, Bart, Richard, Oliver, Vandervorst, Wilfried, Chao Zhao, Heyns, Marc M., Meuris, Marc, Viitanen, Minna M., Brongersma, Hidde H., Ridder, Marco de, Goncharova, Lyudmila V., Garfunkel, Eric, Gustafsson, Torgny, and Tsai, Wilman

Subjects
Germanium -- Electric properties, Oxides -- Electric properties, Hafnium -- Electric properties, Physics
Abstract

Germanium combined with high-k dielectrics is put forth as a potential replacement for planar silicon transistors by the semiconductor industry. A study is carried out on the atomic layer deposition (ALD) of HfO2 high-k dielectric layers on HF-cleaned Ge substrates.

Published
2005

2. Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Author

Puurunen, Riikka L., Vandervorst, Wilfried, Besling, Wim G.A., Richard, Oliver, Bender, Hugo, Conard, Thierry, Chao Zhao, Delabie, Annelies, Caymax, Matty, Gendt, Stefan De, Heyns, Marc, Viitanen, Minna M., Ridder, Marco De, Brongersma, H., Tamminga Yde, Dao, Thuy, Toon de Win, Verheijen Marcel, Kaiser, Monja, and Tuominen, Marko

Subjects
Aluminum -- Atomic properties, Transmission electron microscopes -- Usage, Zirconium oxide -- Atomic properties, Physics
Abstract

Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defects areas, is proposed as the origin of island growth.

Published
2004

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