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This roadmap consolidates recent advances while exploring emerging applications, reflecting the remarkable diversity of hardware platforms, neuromorphic concepts, and implementation philosophies reported in the field. It emphasizes the critical role of cross-disciplinary collaboration in this rapidly evolving field.

Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light-speed communication with superconducting circuits for fast, energy-efficient computation. Monolithic integration of superconducting and photonic devices is necessary for the scaling of this technology. In the present work, superconducting-nanowire single-photon detectors are monolithically integrated with Josephson junctions for the first time, enabling the realization of superconducting optoelectronic synapses. We present circuits that perform analog weighting and temporal leaky integration of single-photon presynaptic signals. Synaptic weighting is implemented in the electronic domain so that binary, single-photon communication can be maintained. Records of recent synaptic activity are locally stored as current in superconducting loops. Dendritic and neuronal nonlinearities are implemented with a second stage of Josephson circuitry. The hardware presents great design flexibility, with demonstrated synaptic time constants spanning four orders of magnitude (hundreds of nanoseconds to milliseconds). The synapses are responsive to presynaptic spike rates exceeding 10 MHz and consume approximately 33 aJ of dynamic power per synapse event before accounting for cooling. In addition to neuromorphic hardware, these circuits introduce new avenues towards realizing large-scale single-photon-detector arrays for diverse imaging, sensing, and quantum communication applications., Comment: 23 pages, 20 figures

We show several techniques for using integrated-photonic waveguide structures to simultaneously characterize multiple waveguide-integrated superconducting-nanowire detectors with a single fiber input. The first set of structures allows direct comparison of detector performance of waveguide-integrated detectors with various widths and lengths. The second type of demonstrated integrated-photonic structure allows us to achieve detection with a high dynamic range. This device allows a small number of detectors to count photons across many orders of magnitude in count rate. However, we find a stray light floor of -30 dB limits the dynamic range to three orders of magnitude. To assess the utility of the detectors for use in synapses in spiking neural systems, we measured the response with average incident photon numbers ranging from less than $10^{-3}$ to greater than $10$. The detector response is identical across this entire range, indicating that synaptic responses based on these detectors will be independent of the number of incident photons in a communication pulse. Such a binary response is ideal for communication in neural systems. We further demonstrate that the response has a linear dependence of output current pulse height on bias current with up to a factor of 1.7 tunability in pulse height. Throughout the work, we compare room-temperature measurements to cryogenic measurements. The agreement indicates room-temperature measurements can be used to determine important properties of the detectors.

We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 {\mu}m to 3 {\mu}m. The devices achieve saturated internal detection efficiency at 1.55 {\mu}m wavelength and exhibit maximum count rates in excess of 10^5 s^-1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred microns exhibit critical currents in excess of 50% of the depairing current. A meandered detector with 2.0 {\mu}m wire width is demonstrated over a surface area of 362x362 {\mu}m^2, showcasing the material and device quality achieved.

We demonstrate adiabatically tapered fibers terminating in sub-micron tips that are clad with a higher-index material for coupling to an on-chip waveguide. This cladding enables coupling to a high-index waveguide without losing light to the buried oxide. A technique to clad the tip of the tapered fiber with a higher-index polymer is introduced. Conventional tapered waveguides and forked tapered waveguide structures are investigated for coupling from the clad fiber to the on-chip waveguide. We find the forked waveguide facilitates alignment and packaging, while the conventional taper leads to higher bandwidth. The insertion loss from a fiber through a forked coupler to a sub-micron silicon nitride waveguide is 1.1 dB and the 3 dB-bandwidth is 90 nm. The coupling loss in the packaged device is 1.3 dB. With a fiber coupled to a conventional tapered waveguide, the loss is 1.4 dB with a 3 dB bandwidth extending beyond the range of the measurement apparatus, estimated to exceed 250 nm.

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stopping range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stopping range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.

We design, fabricate and characterize integrated photonic routing manifolds with 10 inputs and 100 outputs using two vertically integrated planes of silicon nitride waveguides. We analyze manifolds via top-view camera imaging. This measurement technique allows the rapid acquisition of hundreds of precise transmission measurements. We demonstrate manifolds with uniform and Gaussian power distribution patterns with mean power output errors (averaged over 10 sets of 10 inputs) of 0.7 and 0.9 dB, respectively, establishing this as a viable architecture for precision light distribution on-chip. We also assess the performance of the passive photonic elements comprising the system via self-referenced test structures, including high-dynamic-range beam taps, waveguide cutback structures, and waveguide crossing arrays.

We propose and experimentally demonstrate a photonic routing architecture that can efficiently utilize the space of multi-plane (3D) photonic integration. A wafer with three planes of amorphous silicon waveguides was fabricated and characterized, demonstrating $<3\times10^{-4}$ dB loss per out-of-plane waveguide crossing, $0.05 \pm 0.02 $ dB per interplane coupler, and microring resonators on three planes with a quality factors up to $8.2 \times 10^{4}$. We also explore a phase velocity mapping strategy to mitigate the crosstalk between co-propagating waveguides on different planes. These results expand the utility of 3D photonic integration for applications such as optical interconnects, neuromorphic computing and optical phased arrays.

We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $\mu$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED coupled to eleven SNSPDs in a single integrated photonic device. Such on-chip optical links may be useful for quantum information or neuromorphic computing applications.