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MALTA2 is a depleted monolithic active pixel sensor (DMAPS) designed for tracking at high rates and typically low detection threshold of $\sim150\,\mathrm{e^-}$. A precise knowledge of the threshold is crucial to understanding the charge collection in the pixel and specifying the environment for sensor application. A simple procedure is developed to calibrate the threshold to unit electrons making use of a dedicated charge injection circuit and an Fe-55 source with dominant charge deposition of $1600\, \mathrm{e^-}$. The injection voltage is determined which corresponds to the injection under Fe-55 exposure and is the basis for charge calibration. The charge injection circuit incorporates a capacitance with design value of $\mathrm{C_{inj}}=$ 230 aF. Experimentally, the average capacitance value for non-irradiated samples is found to be $\mathrm{C_{inj,exp}}=$ 257 aF. The 12 % divergence motivates the need for the presented precise calibration procedure, which is proposed to be performed for each MALTA2 sensor.

MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3E15 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021-2023 using the MALTA telescope.

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometries. These sensors have a total silicon thickness of between 50-300 $\mu$m, implying reduced material budgets and multiple scattering rates for future detectors which utilize such technology. Furthermore, their monolithic design bypasses the costly stage of bump-bonding in hybrid sensors and can substantially reduce detector costs. This contribution presents the latest results from characterization studies of the MALTA2 sensors, including results demonstrating the radiation tolerance of these sensors., Comment: 4 pages, 4 figures. Accepted by Nuclear Inst. and Methods in Physics Research, A (Proceedings of VCI 2022)