Search

We demonstrate a silicon nitride trench waveguide deposited with bowtie antennas for plasmonic enhanced optical trapping. The sub-micron silicon nitride trench waveguides were fabricated with conventional optical lithography in a low cost manner. The waveguides embrace not only low propagation loss and high nonlinearity, but also the inborn merits of combining micro-fluidic channel and waveguide together. Analyte contained in the trapezoidal trench channel can interact with the evanescent field from the waveguide beneath. The evanescent field can be further enhanced by plasmonic nanostructures. With the help of gold nano bowtie antennas, the studied waveguide shows outstanding trapping capability on 10 nm polystyrene nanoparticles. We show that the bowtie antennas can lead to 60-fold enhancement of electric field in the antenna gap. The optical trapping force on a nanoparticle is boosted by three orders of magnitude. A strong tendency shows the nanoparticle is likely to move to the high field strength region, exhibiting the trapping capability of the antenna. Gradient force in vertical direction is calculation by using a point-like dipole assumption, and the analytical solution matches the full-wave simulation well. The investigation indicates that nanostructure patterned silicon nitride trench waveguide is suitable for optical trapping and nanoparticle sensing applications.

Directive optical leaky wave antennas (OLWAs) with tunable radiation pattern are promising integrated optical modulation and scanning devices. OLWAs fabricated using CMOS-compatible semiconductor planar waveguide technology have the potential of providing high directivity with electrical tunability for modulation and switching capabilities. We experimentally demonstrate directive radiation from a silicon nitride ($Si_3N_4$) waveguide-based OLWA. The OLWA design comprises 50 crystalline Si perturbations buried inside the waveguide, with a period of 1 {\mu}m, each with a length of 260 nm and a height of 150 nm, leading to a directive radiation pattern at telecom wavelengths. The measured far-field radiation pattern at the wavelength of 1540 nm is very directive, with the maximum intensity at the angle of 84.4{\deg} relative to the waveguide axis and a half-power beam width around 6.2{\deg}, which is consistent with our theoretical predictions. The use of semiconductor perturbations facilitates electronic radiation control thanks to the refractive index variation induced by a carrier density change in the perturbations. To assess the electrical modulation capability, we study carrier injection and depletion in Si perturbations, and investigate the Franz-Keldysh effect in germanium as an alternative way. We theoretically show that the silicon wire modulator has a -3 dB modulation bandwidth of 75 GHz with refractive index change of $3\times10^{-4}$ in depletion mode, and 350 MHz bandwidth with refractive index change of $1.5\times10^{-2}$ in injection mode. The Franz-Keldysh effect has the potential to generate very fast modulation in radiation control at telecom wavelengths., Comment: 2015 SPIE Photonics West Proceedings