1. GaAsP solar cells on GaP/Si with low threading dislocation density
- Author
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Jordan R. Lang, Michelle Vaisman, Minjoo Lawrence Lee, and Kevin Nay Yaung
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,Tandem ,business.industry ,Energy conversion efficiency ,02 engineering and technology ,021001 nanoscience & nanotechnology ,7. Clean energy ,01 natural sciences ,Gallium arsenide ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Threading (manufacturing) ,Optoelectronics ,Quantum efficiency ,Dislocation ,0210 nano-technology ,business ,Voltage - Abstract
GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm−2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 106 cm−2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.
- Published
- 2016