1. Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes.
- Author
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Huang, Y., Chen, D. J., Lu, H., Dong, K. X., Zhang, R., Zheng, Y. D., Li, L., and Li, Z. H.
- Subjects
PHOTODIODES ,ELECTROMAGNETIC current density measurement ,TEMPERATURE coefficient of electric resistance ,PHYSIOLOGICAL effects of temperature ,EFFECT of radiation on avalanche photodiodes - Abstract
This letter reports the fabrication and performance of back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes. Devices with a 60-μm-diameter active area and a double-mesa structure exhibit a low dark current density of 1.06 × 10-8 A/cm2 at the reverse bias of 20 V and a maximum multiplication gain up to 3000 at the reverse bias of 91 V. The temperature dependence of avalanche voltage shows a large positive temperature coefficient of 0.05 V/K, confirming that avalanche multiplication is the dominant gain mechanism in the photodiodes. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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