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Piezoelectric materials are a class of materials that can generate an electric charge when subjected to mechanical stress, or vice versa. These materials have a wide range of applications, from sensors and actuators to energy-harvesting devices and medical implants. Recently, there has been growing interest in using 3D printing to fabricate piezoelectric materials with complex geometries and tailored properties. Three-dimensional printing allows for the precise control of the material's composition, microstructure, and shape, which can significantly enhance piezoelectric materials' performance. Three-dimensional printing has emerged as a promising technique for fabricating piezoelectric materials with tailored properties and complex geometries. The development of high-performance piezoelectric materials using 3D printing could have significant implications for various applications, including sensors, energy harvesting, and medical devices. In this review paper, 3D printing methods for piezoelectric materials, their advantages and disadvantages, representative piezoelectric ceramics, and examples of 3D printing are presented. Furthermore, the applications utilizing these materials are summarized. [ABSTRACT FROM AUTHOR]

The energy convergence efficiency (η) and dimensionless figure of merit ( DFOM) of CuO-added ( Na0.5 K0.5) NbO3 ( CNKN) ceramics are larger than those of NKN ceramics because of their large Qm values and small dielectric losses. Moreover, the η and DFOM values of CNKN ceramics are comparable to those of P-5C ceramics, which exhibit the highest η and DFOM. Furthermore, the CNKN harvester exhibits a high power density of 12 mW/cm3 at 93 Hz with a load resistance of 250 kΩ; this is similar to the PZT-based energy harvester, indicating that the CNKN ceramic is a good candidate material for energy harvesters. [ABSTRACT FROM AUTHOR]

Piezoelectric properties of screen-printed thick films, 0.01 Pb( Mg1/2 W1/2) O3-0.41 Pb( Ni1/3 Nb2/3) O3-0.35 PbTiO3-0.23 PbZrO3 + 0.1 wt% Y2 O3 + 1.5 wt% ZnO ( PMW- PNN- PT- PZ+ YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW- PNN- PT- PZ+ YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW- PNN- PT- PZ+ YZ thick films with 900 nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr = 32 μC/cm2, Ec = 25 kV/cm, and d33 = 32 pC/N. These significant piezoelectric properties of our screen-printed PMW- PNN- PT- PZ+ YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro-electromechanical system ( MEMS) applications such as micro actuators and sensors. [ABSTRACT FROM AUTHOR]

For high-power transducer applications, the piezoelectric materials should fulfill specific requirements of a high mechanical quality factor (Q m), a high piezoelectric strain coefficient (d ij), and a high Curie phase transition temperature (T c). In this study, we present an investigation of the structural, piezoelectric, and high-power characteristics of Mn-doped 0.15Pb(Yb 1/2 Nb 1/2)O 3 –0.48Pb(Mg 1/3 Nb 2/3)O 3 –0.37PbTiO 3 (0.15PYN–0.48PMN–0.37PT) ceramics. The introduction of Mn dopants led to an increase in the tetragonal phase fraction within the 0.15PYN–0.48PMN–0.37 PT ceramics and the formation of oxygen vacancies, consequently significantly enhancing Q m due to their synergistic effect. Despite the hardening effect, the high value of the piezoelectric coefficient (d 33) was maintained due to the increase in grain size. Particularly, the specimen doped with 3 mol% of Mn exhibited excellent piezoelectric properties of d 33 = 345 pC/N, Q m = 1159, and T c = 207°C. This specimen displayed a high vibration velocity of 0.6 m/s under the condition of equilibrium Δ T < 20°C (temperature rise from initial temperature), thereby confirming its immense potential for high-power transducer applications. [ABSTRACT FROM AUTHOR]

Abstract: This paper reports on the formation of highly densified piezoelectric thick films of 0.01Pb(Mg1/2W1/2)O3–0.41Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.23PbZrO3+0.1wt% Y2O3+1.5wt% ZnO (PMW–PNN–PT–PZ+YZ) on alumina substrate by the screen-printing method. To increase the packing density of powder in screen-printing paste, attrition milled nano-scale powder was mixed with ball milled micro-scale powder, while the particle size distribution was properly controlled. Furthermore, the cold isostatic pressing process was used to improve the green density of the piezoelectric thick films. As a result of these processes, the PMW–PNN–PT–PZ+YZ thick film, sintered at 890°C for 2h, showed enhanced piezoelectric properties such as P r =42μC/cm2, E c =25kV/cm, and d 33=100pC/N, in comparison with other reports. Such prominent piezoelectric properties of PMW–PNN–PT–PZ+YZ thick films using bi-modal particle distribution and the CIP process can be applied to functional thick films in MEMS applications such as micro actuators and sensors. [Copyright &y& Elsevier]