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The study of the properties of ferroelectric materials against irradiation has a long history. However, anti−irradiation research on the ferroelectric domain has not been carried out. In this paper, the irradiation of switched domain structure is innovatively proposed. The switched domain of 700 nm lithium niobate (LiNbO3, LN) thin film remains stable after gamma irradiation from 1 krad to 10 Mrad, which was prepared by piezoresponse force microscopy (PFM). In addition, the changing law of domain wall resistivity is explored through different sample voltages, and it is verified that the irradiated domain wall conductivity is still larger than the domain. This domain wall current (DWC) property can be applied to storage, logic, sensing, and other devices. Based on these, a ferroelectric domain irradiation resistance model is established, which explains the reason at an atomic level. The results open a possibility for exploiting ferroelectric materials as the foundation in the application of space and nuclear fields. [ABSTRACT FROM AUTHOR]

Domain engineering plays a pivotal role in the development of ferroelectric non-volatile memory devices. In this work, we mainly focus on the domain kinetic in ion-sliced single crystal LiNbO3 thin films under tip-induced electric fields using piezoresponse force microscope (PFM). Polarization reversal takes place when the electric fields are above threshold value (coercive voltage Vc) of films. Besides, the dependence of domain dynamic on pulse duration and amplitude were investigated in detail, and specific local domain reversal (5 μm) was completed by the optimized poling condition. All the results reveal that tip-induced polarization reversal could be an effective way to domain engineering, which gives much more promising prospects regarding to the high density non-volatile ferroelectric memory devices. [ABSTRACT FROM AUTHOR]

Lithium niobate on insulator (LNOI) is widely used in optical, acoustic, domain wall current (DWC)-based integrated circuits and other domain engineering devices, enabling higher material performance, higher domain integration density and more advanced applications. However, there are hidden dangers of thermal failure in these highly integrated domain engineering devices. Therefore, maintaining thermal stability of domain structures in ferroelectric single-crystal thin films is an important and challenging task. Here, thermally induced structure reconstruction of tailored metastable switched domains was research in a 500 nm thick congruent lithium niobate (CLN) thin film, and a method for enhancing the thermal stability of switched domains was proposed. Piezoresponse force microscopy (PFM) and a polyheater are used to accurately monitor the thermal evolution of switched domains in CLN thin film sample. The results indicate the switched domain structures determine the thermal stability, and the enhanced thermal stability of the switched domains increases from 55 to 85 °C–150 °C. In this contribution, the thermal failure in domain engineering devices can be avoided effectively. The investigation paves the way for the development of domain engineering devices based on lithium niobate (LN) thin films. [ABSTRACT FROM AUTHOR]

We demonstrated a BiFeO3single-crystalline thin film, which was deposited on a (100) SrTiO3single-crystal substrate by using a pulse laser deposition technology. The as-grown domain structure was investigated by piezoresponse force microscopy, which possesses two preferential downward <111> orientations in an angle of 71°. We have found that the abnormal out of plane stripe domain patterns match with the in-plane domains. According to schematic diagrams and quantitative equations, we explained that the coupling between the out of plane and in-plane domains arise from the buckling effect, which can open a new way to reconstruct the real polarization vectors. [ABSTRACT FROM AUTHOR]

[Display omitted] • Si-based LiNbO 3 films with the thickness 6.294 μm and roughness 585 pm are obtained by chemical mechanical polishing; • Oxygen plasma treatment reduced the water contact angle of the metal surface and improved the bonding strength; • Chemical mechanical polishing releases the compressive stresses that remain inside the wafer during the bonding; • Large-area ferroelectric domain with a period of 40 μm were reversed at the electric field of 320 kV/cm. In the post Moore era, as the size miniaturization approaches limit of the devices, silicon-based sensors cannot meet the requirements of micro/nano sensing with small size and high precision. The piezoelectric sensor based on lithium niobate (LN) single crystal thin film has excellent electromechanical property, photoelectric property, piezoelectric property, which can realize high precision sensing at small size. In our work, 4-inch silicon-based LN single crystal thin film was prepared based on low-temperature bonding technology and chemical mechanical polishing (CMP) method. The oxygen plasma treatment was adopted for increasing the surface hydrophilia to enhance the bonding strength. Grinding parameters under different film thickness were determined by experiments. The parameters of the film was characterized by scanning electron microscope (SEM) with a thickness of 6.294 μm and by atomic force microscope (AFM) obtained the surface roughness is 585 pm. The x-ray diffraction (XRD) test showed that the CMP process could release the compressive stress caused by the bonding, thus obtaining high quality LN single crystal films. The prepared films are polarized and the domain walls can be clearly observed by piezoresponse force microscopy (PFM). It provides a more comprehensive way to prepare ferroelectric domain devices. [ABSTRACT FROM AUTHOR]

The enrichment domain state and its stability consist an imperative part regarding to the high density non-volatile ferroelectric random access memory (FRAM) devices. In this work, epitaxial BiFeO 3 (BFO) thin films were prepared by pulsed-leaser deposition (PLD) technology, and the morphology, local polarization state and piezoelectric response were characterized by scanning probe microscopy (SPM) and piezoresponse force microscopy (PFM). The robust in-plane domain dynamic process is observed under the external electric fields. Furthermore, good retention and repeatability are observed especially under high temperature. The new-developed domain patterns are nearly stable, which is quite different from the existed research. The formation of these domains is probably induced by the combination of built-in electric fields and distribution of tip fields, both of which affect the polarization dynamic process. All the obtained results pave a great way for application corresponding to the FRAM devices especially under high temperature circumstance. • Epitaxial BiFeO 3 (BFO) thin films were prepared by Pulsed-Leaser Deposition (PLD) technology. • The abundant domain dynamic were investigated by scanning probe microscopy (SPM) and piezoresponse force microscopy (PFM). • Interesting domain dynamics with good retention and repeatability are observed under the external electric fields. [ABSTRACT FROM AUTHOR]

Owing to their high remanent polarization, fast switching behavior, and controllable preparation process, Pb(Zr 0·3 Ti 0.7)O 3 (PZT) thin films are considered to be one of the most promising materials for non-volatile ferroelectric random access memory (FRAM). In this work, high-quality PZT thin films with a preferred (111) orientation and smooth surface are obtained by the sol–gel method. The temperature dependence of the ferroelectricity and domain switching behavior is thoroughly investigated by piezoresponse force microscopy (PFM). The domain structure undergoes distinct 180° switching and reconstruction under an external DC voltage. Polarization hysteresis loop analysis of PZT reveals that the spontaneous polarization (P s), remanent polarization (P r), and coercive voltage (V c) decrease as the temperature increases from 20 to 70 °C, in agreement with the Landau classical theory of phase transition. In addition, the PFM results show that the PZT films consistently exhibit good switching behavior as the temperature increases from 23.7 to 70 °C. An increase in the piezoelectric constant (D max) with increasing temperature is ascribed to more rapid domain wall movement and easier domain reorientation, as predicted by thermodynamic theory. This investigation suggests that the temperature strongly affects the ferroelectricity and switching behavior of PZT thin films and offers guidance for the design of FRAM. [ABSTRACT FROM AUTHOR]