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In this paper, a high-performance PIN diode single-pole-double-throw (SPDT) switch for W-band application is developed. By employing quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) technology, the cost of the switch is significantly reduced while maintaining performance and size with conventional MMIC counterpart. A 3-D PIN diode model is used to describe the diode characteristic under both forward and reverse biasing states. In order to alleviate parasitic parameters effect on performance of the switch, compensation structures are analyzed and adopted. The measurement results show the insertion loss is less than 2 dB from 82 to 100 GHz and the isolation is greater than 32 dB from 82 to 105 GHz. The total size of the SPDT switch is 2.1 mm × 4.3 mm. [ABSTRACT FROM PUBLISHER]

In this paper, a W-band single pole single throw (SPST) switch based on a novel PIN diode model is presented. The PIN diode is modeled using a full-wave electromagnetic (EM) simulator and its parasitic parameters under both forward and reverse bias states are described by a T-network. By this approach, the measurement-based model, which is usually a must for high performance switch design, is no longer necessary. A compensation structure is optimized to obtain a high isolation of the switch. Accordingly, a W-band SPST switch is designed using a full wave EM simulator. Measurement results agree very well with simulated ones. Our measurements show that the developed switch has less than 1.5 dB insertion loss under the 'on' state from 88 GHz to 98 GHz. Isolation greater than 30 dB over 2 GHz bandwidth and greater than 20 dB over 5 GHz bandwidth can be achieved at the center frequency of 94 GHz under the 'off' state. [ABSTRACT FROM AUTHOR]